Two special MRAM-related events at IEDM 2017 (4-6 Dec 2017)
organized by the IEEE Magnetics Society:
1) A special poster session dedicated to MRAM
2) The 9th MRAM Global Innovation Forum (7 Dec 2017)
IEDM is the main annual conference of the IEEE Electron Devices Society (4-6 December 2017, Hilton Union Square, San-Francisco). With the rising interest of the microelectronics industry in STT-MRAM, it is very important to strengthen the relationshipbetween the microelectronics and magnetism communities in order to accelerate the development of this new hybrid technology. For that, two special events related to MRAM technology are being organized around IEDM.
1) A special poster session entirely dedicated to MRAM (MRAM materials/phenomena/ technology/testing, hybrid CMOS/MTJ technology and circuits, spin-logic).A similar MRAM poster session took place at IEDM 2016 and was verysuccessful with 33 posters presented and very active cross-disciplinary discussions. This session will be technically organized by the IEEE Magnetics Society and will be embedded in the IEDM 2017 conference. It will appear as a special MRAM poster session in the IEDM program ( The posters will be selected by a small international program committee formed by members of the IEEE Magnetics Society. There will be no publications associated with these posters in the Proceedings of IEDM.
To present a poster during the MRAM poster session at IEDM2017, send a half page abstract to before 26 September 2017. In the list of authors, underline who will be the presenting author. The notice of acceptance/rejection will be sent by mid-October. Participants in this poster session willneed to register at IEDM as regular attendees. More information can be found at
2) The 9th MRAM Global Innovation Forum(Hilton Union Square, 7 Dec 2017)
This is a one-day forum organized the day following IEDM (i.e on 7 December 2017, 8:45am - 5:30pm) in the same hotel as IEDM (Hilton Union Square, 333 O'Farrell St, San Francisco). The Forum will consist of 10 invited talks from leading experts and a panel discussion. Various MRAM related topics will be covered including STT-MRAM technology, memory and processor demonstrations, spin orbit torque MRAM, and the needs, challenges and potential of MRAM. The Forum was originally initiated by Samsung Semiconductor, and this forum marks the 9th edition of the series.
The registration to the Forum will be free of charge, including free lunch. However the number of attendees will be limited. To register to the Forum, send an email to with first name, last name, contact email, affiliation.A confirmation email will be sent to you.The deadline for registration will be 3rd November 2017.More information can be found at
We strongly encourage teams from magnetism community working on MRAM to send attendees to IEDM and participate in these two events.
Bernard DIENY and Bruce TERRIS