Publication List of Si-Chen Lee
[A] Referred Paper
1. C. M. Garner, C. Y. Su, W. A. Saperstein, K. G. Jew, S. C. Lee, G. L. Pearson and W. E. Spicer, 1979, Effect of GaAs or GaxAl1-xAs Oxide Composition on Schottky-Barrier Behavior", J. Appl. Phys., 50, pp. 3376-3381.
2. C. M. Garner, C. Y. Su, Y. D. Shen, S. C. Lee, G. L. Pearson, W. E. Spicer, D. D. Edwall, D. Miller and J. S. Harris, Jr., 1979, J. Appl. Phys., 50, pp. 3383-3388.
3. S. C. Lee and G. L. Pearson, 1980, "Band Readjustment" Effect with Applications to Solar Cells", IEEE Trans. Electron Devices, ED-27, pp.844-850.
4. S. C. Lee and G. L. Pearson, 1981, "Dark Current Reduction in AlxGa1-xAs-GaAs Heterojunction Diodes", J. Appl. Phys. 52, pp. 275-278.
5. S. C. Lee and G. L. Pearson, 1981, "Rectification in AlxGa1-xAs-GaAs N-n Heterojunction Devices", Solid State Electronics, 24, pp. 563-568.
6. S. C. Lee and G. L. Pearson, 1981, "Current-Voltage Characteristics of AlxGa1-xAs-GaAs Schottky Barriers and p-n Junctions", J. Appl. Phys., 52, pp. 5202-5206.
7. R. Tsu, J. Gonzalez-Hernando, S. S. Chao, S. C. Lee and K. Tanaka, 1982, "Critical Volume Fraction of Crystallinity in Percolation Process of Phosphorus Doped Amorphous Si:H:F Alloys", Appl. Phys. Lett., 40, pp. 534-535.
8. S. C. Lee and S. S. Chao, 1983, "Percolation Process in High Conductivity Phosphorus-
Doped Amorphous Si:H:F Alloys", J. Chinese Inst. Engineers, vol. 6, pp. 245-249.
9. S. C. Lee, 1984, "Boron Contamination in the Intrinsic Layers of Amorphous Silicon Solar Cells", J. Appl. Phys., 55, pp. 4426-4429.
10. S. C. Lee, J. N. Kau and H. H. Lin, 1984, "Origin of High Offset Voltage in an AlGaAs/GaAs Heterojunction Bipolar Transistor", Appl. Phys. Lett., 45, pp. 1114-1116.
11. S. C. Lee, H. H. Lin and Y. L. Chiou, 1984, "0.8 and 0.85 m Dual-Wavelength Photodetector with 50 nm Resolution", Solid State Electron, 27, pp. 917-919.
12. S. C. Lee, J. N. Kau and H. H. Lin, 1985, "Current Transport across the Emitter-Base Potential Spike in AlGaAs/GaAs Heterojunction Bipolar Transistors", J. Appl. Phys., 58, pp. 890-895.
13. H. H. Lin and S. C. Lee, 1985, "Direct Measurement of the Potential Spike Energy in AlGaAs/GaAs Single Heterojunction Bipolar Transistors", IEEE Electron Device Lett., EDL-6, pp. 431-433.
14. H. H. Lin and S. C. Lee, 1985, "Super-Gain AlGaAs/GaAs Heterojunction Bipolar Transistors using an Emitter Edge-Thinning Design", Appl. Phys. Lett., 47, pp. 839-841.
15. J. A. Chen, S. C. Lee and T. I. Ho, 1985, "The Etching Characteristics of (100) GaAs by K2S2O8 – H2O System", J. Electrochemical Soc., 132, pp. 3016-3019.
16. M. H. Shieh, H. H. Lin, S. C. Lee and Y. L. Chiou, 1985, "AlGaAs/GaAs Oxide Stripe Double Heterostructure Lasers", J. Chinese Inst. Engineers, vol. 8, pp. 191-199.
17. J. A. Chen, S. C. Lee and H. H. Lin, 1985, "AlGaAs/GaAs V-Groove Channeled Substrate
Burried Heterostructure Laser Diodes", J. Chinese Inst. Engineers, vol. 8, pp. 311-316
18. S. C. Lee and H. H. Lin, 1986, "Transport Theory of the Double Heterojunction Bipolar Transistor based on Current Balancing Concept", J. Appl. Phys., 59, pp. 1688-1695.
19. S. C. Lee and T. B. Sun, 1986, "p-(Al,Ga)As/GaAs Modulation-doped Heterostructure Prepared by Liquid Phase Epitaxy", J. Phys. Chem. of Solids, 47, pp. 975-979.
20. H. H. Lin and S. C. Lee, 1986, "Determination of the AlGaAs Bandgap by Spectral Response Measurement", J. Chinese Inst. Engineers, vol. 9, pp. 317-322.
21. H. K. Chiou and S. C. Lee, 1986, "AlGaAs Buried Heterostructure Lasers", Proc. of National Science Council, Part A, vol. 11, No. 2, pp. 142-148.
22. C. Z. Chen and S. C. Lee, 1987, "Effect of Base-Collector potential spike on the Common-Emitter I-V Characteristics of AlGaAs Double Heterojunction Bipolar Transistors", IEEE Trans. Electron Devices, ED-34, pp.1463-1469.
23. J. K. Chen and S. C. Lee, 1987, "AlGaAs/GaAs Visible Ridge Waveguide Laser with Multicavity Structure", IEEE J. Quantum Electronics, QE-23, pp. 1283-1286.
24. S. W. Jan and S. C. Lee, 1987, "Preparation and Characterization of Indium-Tin-Oxide Deposited by Direct Thermal Evaporation of Metal Indium and Tin", J. Electrochemical Society, 134, pp. 2056-2061.
25. W. J. Tzeng, H. K. Tsai and S. C. Lee, 1987, "Degradation and Annealing Characteristics of Amorphous Silicon Hydrogen Alloys after long time test", J. Appl. Phys., 62, pp. 1856-1860.
26. H. K. Tsai, S. C. Lee and W. L. Lin, 1987, " The Amorphous SiC/Si Two Color Detector", IEEE Electron Device Lett., EDL-8, pp. 365-367.
27. C. Z. Chen, S. C. Lee and H. H. Lin, 1987, "Design of AlGaAs Double Heterojunction Bipolar Transistors", J. Appl. Phys., 62, pp. 3976-3979.
28. C. W. Liu, S. L. Chen, J. P. Lay, S. C. Lee and H. H. Lin, 1987, "The Characteristics of Si-Doped GaAs Epilayers grown by Metal Organic Chemical Vapor Deposition (MOCVD) Using Silane Source", Appl. Phys. Lett., 51, pp. 1634-1636.
29. W. L. Lin, H. K. Tsai, S. C. Lee, W. J. Sah and W. J. Tzeng, 1987, "The Identification of Infrared Absorption Peaks of Amorphous Silicon Carbon Alloy by Thermal Annealing", Appl. Phys. Lett., 51, pp. 2112-2114.
30. H. K. Tsai and S. C. Lee, 1988, "Amorphous SiC/Si Three-Color Detector", Appl. Phys. Lett., 52, pp. 275-277.
31. J. G. Hwu, G. S. Lee, S. C. Lee and W. S. Wang, 1988, "Residual Charges Effect on the Annealing Behavior of Co-60 Irradiated MOS Capacitors", IEEE Trans. Nuclear Science, 35, pp. 960-965.
32. H. K. Tsai, W. L. Lin, W. J. Sah and S. C. Lee, 1988, "The Characteristics of Amorphous Silicon Carbide Hydrogen Alloy", J. Appl. Phys., 64, pp. 1910-1915.
33. C. Z. Chen, S. C. Lee and H. H. Lin, 1988, "The Hot Electron Effect in Double Heterojunction Bipolar Transistors: Theory and Experiment", Solid State Electronics, 31, pp. 1653-1656.
34. W. J. Tzeng and S. C. Lee, 1988, "New Model for the Staebler-Wronski Effect in an Amorphous Silicon Hydrogen Alloy", Appl. Phys. Lett., 53, pp. 2044-2046.
35. L. C. Suen and S. C. Lee, 1988, "AlGaAs/GaAs Ridge Waveguide Laser Array", J. Chinese Inst. Engineers, vol. 11, No. 3, pp. 261-267.
36. H. K. Liou, S. Y. Lan, C. W. Liu and S. C. Lee, 1988, "Heteroepitaxy of GaAs on Si by Metal Organic Chemical Vapor Deposition", Bulletin of College of Engineering, National Taiwan University, No. 43, pp. 75-91.
37. W. J. Sah, H. K. Tsai and S. C. Lee, 1989, "Physical and Electronic Structure of Amorphous Silicon Carbon Hydrogen Alloy", Appl. Phys. Lett., 54, pp. 617-619.
38. T. S. Lay, S. C. Lee and H. H. Lin, 1989, "Y-Junction and Misaligned-Stripe Diode Laser Arrays with Nonuniform Refective Diffraction Coupler", IEEE J. Quantum Electronics, QE-25, pp.689-695.
39. J. A. Chen, J. H. Lee, S. C. Lee and H. H. Lin, 1989, "Abrupt Heterointerfaces in Al0.35Ga0.65As/ Al0.05Ga0.95As/Al0.35Ga0.65As Quantum Well Structure Grown by Liquid Phase Epitaxy", J. Appl. Phys., 65, pp. 4006-4009.
40. H. K. Tsai and S. C. Lee, 1989, "Theoretical Investigation of the C-V Relationship in an Amorphous Silicon p-n Junction", Solid State Electronics, 32, pp. 727-731.
41. H. K. Tsai and S. C. Lee, 1989, "Origin of Boron Contamination of the Intrinsic Amorphous Silicon Hydrogen Alloys in Glow Discharge System", J. Electrochemical Soc., 136, pp. 3011-3016.
42. T. P. Sun, S. C. Lee and S. J. Yang, 1989, "The Electrical Characteristics of Metal/SiO2/InSb Capacitor Fabricated by Photo-Enhanced Chemical Vapor Deposition", J. Vacuum Sci. & Tech. B, 7, pp. 1115-1121.
43. S. C. Lee, 1989, "The Generation of Chi by Stimulation Method", Bulletin of College of Engineering, National Taiwan University, No. 46, pp. 117-125. (in Chinese)
44. T. P. Sun, S. C. Lee and S. J. Yang, 1990, "The Current Leakage Mechanism in InSb p+n Diodes", J. Appl. Phys., 67, pp. 7092-7097.
45. W. J. Sah, S. C. Lee, H. K. Tsai and J. H. Chen, 1990, "Amorphous Silicon Edge Detectors for Application to Neural Network Image Sensors", Appl. Phys. Lett., 56, pp. 2539-2541.
46. J. L. Lin, W. J. Sah and S. C. Lee, 1990, "Theoretical Analysis of Channel Doped Amorphous Silicon Field-Effect Transistors", J. Appl. Phys., 68, pp. 1335-1339.
47. C. C. Wu, J. L. Ting, S. C. Lee and H. H. Lin, 1990, "Studies of Low Surface 2kT Recombination Current of the Emitter-Base Heterojunction of Heterojunction Bipolar Transistors", J. Appl. Phys., 68, pp. 1766-1771.
48. J. A. Chen, C. K. Wang, H. H. Lin, W. S. Wang and S. C. Lee, 1990, "Single and Mulitiple ALGaAs Quantum-well Structures Grown by Liquid-phase Epitaxy", J. Appl. Phys., 68, pp. 2140-2145.
49. S. J. Yih and S. C. Lee, 1990, "AlGaAs/GaAs Surface Emitting Laser Diode with Curved Reflector", Electronics Letts., 26, pp. 1506-1507.
50. T. P. Sun, S. C. Lee, K. C. Lin, Y. M. Pang and S. J. Yang, 1990, "High Performance Metal/SiO2/InSb Capacitor Fabricated by Photo-Enhanced Chemical Vapor Deposition", J. Appl. Phys., 68, pp. 3701-3706.
51. Y. H. Jan and S. C. Lee, 1990, " Verticle Monolithic Integration of a GaAs/AlGaAs V-Channeled Substrate Inner Stripe Laser Diode and a Heterojunction Bipolar Transistor", Appl. Phys. Lett. 57, pp. 2750-2752.
52. S. C. Lee, 1990, "The Qigong States and the Infrared Spectra of External "Qi"", Bulletin of College of Engineering, National Taiwan University, No. 49, pp. 97-108. (in Chinese)
53. W. J. Sah, J. L. Lin and S. C. Lee, 1991, "High Performance a-Si:H Thin Film Transistor Using Lightly Doped Channel", IEEE, Trans. Electron Devices, ED-38, pp. 676-678.
54. J. L. Lin, W. J. Sah and S. C. Lee, 1991, "Amorphous Silicon Thin Film Transistors with very High Field Effect Mobility", IEEE Electron Device Lett., EDL-12, pp. 120-121.
55. J. H. Chen, W. J. Sah and S. C. Lee, 1991, "Identification of Infrared Absorption Peaks of Amorphous Silicon Carbon Hydrogen Alloy Prepared Using Ethylene", J. Appl. Phys., 70, pp. 125-130.
56. Y. F. Chen, S. C. Lee, and J. H. Chen, 1991, "Existence of a Universal Low Energy Tail in the Photoluminescence of a-SiC:H Alloys", Solid State Comm., 79, pp. 175-177.
57. H. C. Lin, W. J. Sah and S. C. Lee, 1991, "The Crystalline PMOS Inverter Using Amorphous Thin Film Transistor as Active Load", Electron Lett., 27, pp. 2180-2181.
58. C. H. Chien, J. J. Tsuei, S. C. Lee, Y. C. Huang and Y. H. Wei, 1991, "Effect of Emitted Bioenergy on Biochemical Function of Cells", American J. of Chinese Medicine, vol. XIX, Nos. 3-4, pp. 285-292.
59. C. H. Chen and S. C. Lee, 1991, "Monolithic Integration of an AlGaAs/GaAs Surface Emitting Laser Diode and a Photodetector", Appl. Phys. Lett., 59, pp. 3592-3594.
60. S. C. Lee, and Y.C Chang, 1991, "The two Qigong States Characterized by Wave", J. Chinese Medicine, vol. 2, No. 1, pp. 30-46. (in Chinese)
61. C. C Wu, S. C. Lee, and H. H. Lin, 1992, "High Gain Npn AlGaAs/GaAs Heterojunction Bipolar Transistors Prepared by Molecular Beam Epitaxy", Jpn. J. Appl. Phys., 31, Part 2, pp., L385-L387.
62. J. S. Chou, W. J. Sah, T. C. Chang, J. C. Wang and S. C. Lee, 1992, "Microcrystalline Silicon Deposited by Glow Discharge Decomposition of Heavily Diluted Silane", Materials Chemistry and Physics, 32, pp. 273-279.
63. B. D. Liu, T. H. Shieh, M. Y. Wu, T. C. Chang, S. C. Lee, and H. H. Lin, 1992, "Stress Induced Outdiffusion of Be in p+ GaAs Prepared by Molecular Beam Epitary", J. Appl. Phys., 72, pp. 2767-2772.
64. H. C. Lin, W. J. Sah and S. C. Lee, 1992, "The Common Gate CMOS Inverter with Amorphous Silicon Thin Film Transistor on Top of Crystalline PMOS", Solid State Electronics, Vol. 35, No. 12, pp. 1709-1712.
65. H. C. Lin, W. J. Sah and S. C. Lee, 1992, "The Vertical Integration of Crystalline NMOS and Amorphous Orientational Edge Detector", IEEE Trans. Electron Devices, ED-39, pp. 2810-2812.
66. C. C. Wu and S. C. Lee, 1992, "Emitter Composition and Geometry Related Surface Recombination Current of AlGaAs/GaAs Heterojunction Bipolar Transistors", J. Appl. Phys., 72, pp. 5483-5488.
67. K. C. Lin and S. C. Lee, 1992, "The Structural and Optical Properties of a-SiNx:H Prepared by Plasma Enhanced Chemical Vapor Deposition", J. Appl Phys., 72, pp. 5474-5482.
68. S. Z. Chang, T. C. Chang and S. C. Lee, 1993, "The Growth of Highly Mismatched InxGa1-xAs (0.28≦x≦1) on GaAs by Molecular Beam Epitaxy", J. Appl. Phys., 73, pp. 4916-4926.
69. T. H. Shieh and S. C. Lee, 1993, "Observation of Deep Donor Center Related Tunneling Peak in the AlxGa1-xAs/AlAs/AlxGa1-xAs/AlAs/AlxGa1-xAs (0.4≦x≦0.5) Resonant Tunneling Diodes", Appl. Phys. Lett., 63, pp. 654-656.
70. C. H. Lin, S. C. Lee, and Y. F. Chen, 1993, "Strong Room-temperature Photoluminescence of Hydrogenated Amorphous Silicon Oxide and its correlation to Porous Silicon", Appl. Phys. Lett,. 63, pp. 902-904.
71. T. H. Shieh and S. C. Lee, 1993, "Resonant Tunneling of X Band Electrons from AlAs through GaAs/AlAs/GaAs Double Barrier Structure", Appl. Phys. Lett., 63, pp. 1219-1221.
72. T. H. Shieh, C. C. Wu and S. C. Lee, 1993, "Observation of X Band Electron Quantum Interference in AlxGa1-xAs/AlAs/AlxGa1-xAs/AlAs/AlxGa1-xAs (x≧0.4) Resonant Tunneling Diodes", J. Appl. Phys., 74, pp. 4229-4232.
73. S. Z. Chang, S. C. Lee, H. P. Shiao, W. Lin and Y. K. Tu, 1993, "Novel Binary Buffer Layer for Applications in the Heteroepitaxy of Highly Mismatched In0.53Ga0.47As Epilayers Grown on GaAs Substrates", Appl. Phys. Lett., 63, pp. 2417-2419.