FACULTY OF ENGINEERING

LAB SHEET

ENT3056ADVANCED FABRICATION TECHNOLOGY

TRIMESTER III 2014/2015

AFT1 – NMOS and PMOSProcessingSimulations

AFT2 – Design of Advanced MOSFETs

*Note: On-the-spot evaluation will be carried out during or at the end of the experiments.Questions regarding metal oxide semiconductor(MOS) device processing and fabrication, as well as device simulation will be asked during the evaluation. Students are advised to read through this lab sheet before doing the experiment. Your individual performance during on-the-spot evaluation, participation in the lab simulation work, teamwork effort, and learning attitude will count towards the lab marks, in addition to the lab report.

Please bring along your USB stick for data files saving purpose.

INTRODUCTION:

Complementary metal–oxide–semiconductor (CMOS) is a major class of integrated circuits. CMOS technology is used in chips such as microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for a wide variety of analog circuits such as image sensors, data converters, and highly integrated transceivers for many types of communication. CMOS is also sometimes explained as complementary-symmetry metal–oxide–semiconductor. The words "complementary-symmetry" refer to the fact that the typical digital design style with CMOS uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. Two important characteristics of CMOS devices are high noise immunity and low static power supply drain. Significant power is only drawn when its transistors are switching between on and off states; consequently, CMOS devices do not produce as much heat as other forms of logic such as TTL (transistor-transistor logic). CMOS also allows a high density of logic functions on a chip.

In this simulation, the fundamentals of MOS chip fabrication will be discussed and the major steps of the process flow will be examined. The emphasis will be on the general outline of the process flow and on the interaction of various processing steps, which ultimately determine the device and the circuit performance characteristics. This simulation shows that there are very strong links between the fabrication process and the device performance. Hence, the circuit designer must have a working knowledge of chip fabrication to create effective designs in order to optimize the circuits with respect to various manufacturing parameters.

The following discussion will concentrate on the well-established CMOS fabrication technology, which requires that both n-channel (nMOS) and p-channel (pMOS) transistors be built on the same chip substrate. To accommodate both nMOS and pMOS devices, special regions must be created in which the semiconductor type is opposite to the substrate type. These regions are called wells or tubs. A p-well is created in an n-type substrate or, alternatively, an n- well is created in a p-type substrate. In the simple n-well CMOS fabrication technology presented, the nMOS transistor is created in the p-type substrate, and the pMOS transistor is created in the n-well, which is built-in into the p-type substrate. In the twin-tub CMOS technology, additional tubs of the same type as the substrate can also be created for device optimization.

The simplified process sequence for the fabrication of CMOS integrated circuits on a p- type silicon substrate is shown in Fig. 1. The process starts with the creation of the n-well regions for pMOS transistors, by impurity implantation into the substrate. Then, a thick oxide is grown in the regions surrounding the nMOS and pMOS active regions. The thin gate oxide is subsequently grown on the surface through thermal oxidation. These steps are followed by the creation of n+ and p+ regions (source, drain and channel-stop implants) and by final metallization (creation of metal interconnects).

Figure-1: Simplified process sequence for fabrication of the n-well CMOS integrated circuit with a single polysilicon layer, showing only major fabrication steps.

The process flow sequence pictured in Fig.1 may at first seem to be too abstract, since detailed fabrication steps are not shown. To obtain a better understanding of the issues involved in the semiconductor fabrication process, we first have to consider some of the basic steps in more detail.

Fabrication Process Flow - Basic Steps

The integrated circuit may be viewed as a set of patterned layers of doped silicon, polysilicon, metal and insulating silicon dioxide. In general, a layer must be patterned before the next layer of material is applied on chip. The process used to transfer a pattern to a layer on the chip is called lithography. Since each layer has its own distinct patterning requirements, the lithographic sequence must be repeated for every layer, using a different mask.

To illustrate the fabrication steps involved in patterning silicon dioxide through optical lithography, let us first examine the process flow shown in Fig. 2. The sequence starts with the thermal oxidation of the silicon surface, after which an oxide layer with thickness of about 1 micrometer, for example, is created on the substrate (Fig. 2(b)). The entire oxide surface is then covered with a layer of photoresist, which is essentially a light-sensitive, acid-resistant organic polymer, initially insoluble in the developing solution (Fig. 2(c)). If the photoresist material is exposed to ultraviolet (UV) light, the exposed areas become soluble so that they are no longer resistant to etching solvents. To selectively expose the photoresist, we have to cover some of the areas on the surface with a mask during exposure. Thus, when the structure with the mask on top is exposed to UV light, areas which are covered by the opaque features on the mask are shielded from the light and remain insoluble. On the other hand, in the areas where the UV light can pass through, the photoresist is exposed and becomes soluble (Fig. 2(d)).

Figure-2: Process steps required for patterning of silicon dioxide.

The type of photoresist which is initially insoluble and becomes soluble after exposure to UV light is called positive photoresist. The process sequence shown in Fig. 2 uses positive photoresist. There is another type of photoresist which is initially soluble and becomes insoluble (hardened) after exposure to UV light, called negative photoresist. If negative photoresist is used in the photolithography process, the areas which are not shielded from the UV light by the opaque mask features become insoluble, whereas the shielded areas can subsequently be etched away by a developing solution. Negative photoresists are more sensitive to light, but their photolithographic resolution is not as high as that of the positive photoresists. Therefore, negative photoresists are used less commonly in the manufacturing of high-density integrated circuits.

Following the UV exposure step, the exposed portions of the photoresist can be removed by a solvent. Now, the silicon dioxide regions which are not covered by hardened photoresist can be etched away either by using a chemical solvent (HF acid) or by using a dry etch (plasma etch) process (Fig. 2(e)). Note that at the end of this step, we will obtain an oxide window that reaches down to the silicon surface (Fig. 2(f)). The remaining photoresist can now be stripped from the silicon dioxide surface by using another solvent, leaving the patterned silicon dioxide feature on the surface as shown in Fig. 2(g).

The sequence of process steps illustrated in detail in Fig. 2 actually accomplishes a single pattern transfer onto the silicon dioxide surface, as shown in Fig. 3. The fabrication of semiconductor devices requires several such pattern transfers to be performed on silicon dioxide, polysilicon, and metal layers. The basic patterning process used in all fabrication steps, however, is quite similar to the one shown in Fig. 2. Also note that for accurate generation of high-density patterns required in sub-micron devices, electron beam (E-beam) lithography is used instead of optical lithography. In the following section, the main processing steps involved in the fabrication of an n-channel MOS transistor on p-type silicon substrate will be examined.

Figure-3: The result of a single lithographic patterning sequence on silicon dioxide, without showing the intermediate steps. Compare the unpatterned structure (top) and the patterned structure (bottom) with Fig. 2(b) and Fig. 2(g), respectively.

The process starts with the oxidation of the silicon substrate (Fig. 4(a)), in which a relatively thick silicon dioxide layer, also called field oxide, is created on the surface (Fig. 4(b)). Then, the field oxide is selectively etched to expose the silicon surface on which the MOS transistor will be created (Fig. 4(c)). Following this step, the surface is covered with a thin, high-quality oxide layer, which will eventually form the gate oxide of the MOS transistor (Fig. 4(d)). On top of the thin oxide, a layer of polysilicon (polycrystalline silicon) is deposited (Fig. 4(e)). Polysilicon is used both as gate electrode material for MOS transistors and also as an interconnect medium in silicon integrated circuits. Undoped polysilicon has relatively high resistivity. However, the resistivity of polysilicon can be reduced by doping it with impurity atoms.

After deposition, the polysilicon layer is patterned and etched to form the interconnects and MOS transistor gates (Fig. 4(f)). The thin gate oxide not covered by polysilicon is also etched away, which exposes the bare silicon surface on which the source and drain junctions are to be formed (Fig. 4(g)). The entire silicon surface is then doped with a high concentration of impurities, either through diffusion or ion implantation (in this case with donor atoms to produce n-type doping). Figure 4(h) shows that the doping penetrates the exposed areas on the silicon surface, ultimately creating two n-type regions (source and drain junctions) in the p-type substrate. The impurity doping also penetrates the polysilicon on the surface, reducing its resistivity. Note that the polysilicon gate, which is patterned before doping actually defines the precise location of the channel region and, hence, the location of the source and the drain regions. Since this procedure allows very precise positioning of the two regions relative to the gate, it is also called the self-aligned process.

Figure-4: Process flow for the fabrication of an n-type MOSFET on p-type silicon.

Once the source and drain regions are completed, the entire surface is again covered with an insulating layer of silicon dioxide (Fig. 4(i)). The insulating oxide layer is then patterned in order to provide contact windows for the drain and source junctions (Fig. 4(j)). The surface is covered with evaporated aluminum which will form the interconnects (Fig. 4(k)). Finally, the metal layer is patterned and etched, completing the interconnection of the MOS transistors on the surface (Fig. 4(l)). Usually, a second (and third) layer of metallic interconnect can also be added on top of this structure by creating another insulating oxide layer, cutting contact (via) holes, depositing, and patterning the metal.

The schematic cross-section of a simple CMOS inverter circuit constituted by an n-channel MOS transistor and a p-channel MOS transistor is shown in Fig. 5 below. The CMOS integrated circuit can be accomplished by fabricating the n-channel and p-channel MOS devices on the same substrate, following the fabrication processes discussed for Fig. 1-4.

Figure-5: Schematic cross-section of a CMOS inverter constituted by an n-channel MOS transistor and a p-channel MOS transistor.

References:

[1]H. Graoui and A. Al-Bayati, “Accuracy of doping and process optimization for 0.18um PMOS technology,”IEEE. Ion Implantation Tech., pp.189-192, 2002.

[2]W. Maly, “Atlas of IC Technologies,” Menlo Park, CA: Benjamin/Cummings, 1987.

[3]A. S. Grove, “Physics and Technology of Semiconductor Devices,” New York: John Wiley & Sons, Inc., 1967.

[4]G. E. Anner, “Planar Processing Primer,” New York: Van Nostrand Rheinhold, 1990.

[5]T. E. Dillinger, “VLSI Engineering, Englewood Cliffs,” New Jersey: Prentice-Hall, Inc., 1988.

[6]S.M. Sze, “VLSI Technology,”New York: McGraw-Hill, 1983.

AFT1 – NMOS and PMOS Processing Simulations

NMOS

OBJECTIVES:

  • To design 0.50μm NMOS.
  • To analyze NMOS I-V curve under different influent factors.

SIMULATION SOFTWARE:

Silvaco TCAD

METHODOLOGY:

Basic MOS ATHENA to ATLAS interface example simulating an Id/Vgs curve and extracting threshold voltage and other SPICE parameters. This experiment demonstrates:

  • Process simulation of a MOS transistor in ATHENA
  • Process parameter extraction (eg. oxide thickness)
  • Auto interface between ATHENA and ATLAS
  • Simple Id/Vgs curve generation with Vds=0.1V
  • IV curve parameter extraction for Vt, Beta and Theta

The extract statement at the end of the file is used to measure the threshold voltage and other SPICE parameters. The results from the extract statements are printed in the run-time output, saved to a file called results.final and optionally used in the optimizer. One operator of particular use in NMOS device extraction is abs(). This takes the absolute value of a variable and can be used to make all PMOS and NMOS extractions equivalent.

Part A: Simulation of the existing NMOS example

  1. Double click on ‘deckbuild’ icon.
  2. Right click on ‘Main Control’ and choose ‘Examples’.
  3. Double click on ‘1 MOS1: MOS Application Examples’.
  4. From the examples, double click on ‘1.1 mos1ex01.in:NMOS: Id/Vgs and Threshold Voltage Extraction’.
  5. Read the function of this example and left click on ‘Load example’ to load the commands of this example. Choose ‘Confirm’ from the popup notice.
  6. From the trace in middle, click ‘run’ to simulate the example.
  7. After a while, NMOS structure and its Id/Vgs curve will be simulated on pop-up “TonyPlot” platform.
  8. You can zoom in the NMOS structure by drawing a rectangle at the desired portion.
  9. The NMOS structure and the Id/Vgs curve can be saved on computer desktop, in a folder named “tcad8’s Home”as postscript files by clicking the “Print” option on the “TonyPlot” platform. The postscript files named “print.out.0”can be viewed at Windows-operated computer using any online-downloaded postscript viewers, ormicrosoft word document by “inserting” the “postscript files” into the doc. From the postscript viewer, the NMOS structure and the Id/Vgs curve can then be saved as image files (JPEG or TIFF). One of the examples of online postscript viewers is available at:
  10. In your report, sketch the Id/Vgs curves. The raw data of Id/Vgs curve can be obtained from the “tcad8’s Home” folder, from a file with “.log” extension.
  11. In your report, record the extraction values from the ‘result.final’ file. (eg. gate oxide thickness, Vt)

Part B: Effects of different influent factors onNMOS structure and Ids/Vgs curve

B1. Effects of Source/Drain Concentration

  1. In ANTHENA, change S/D concentration to 5e12cm-3
  1. Click on “run” button to start simulation.
  2. Save the simulated structure and graph generated.
  3. Repeat step 2 and 4 with S/D concentration of 8e17 cm-3
  4. Compare and discuss the structure, Id-Vgs curve simulated.

B2. Effects of Threshold Voltage Adjust Implant Concentration

  1. In ANTHENA, alter the Vt adjust concentration to 9.5e10cm-3
  1. Click on “run” button to start simulation.
  2. Save the simulated structure and graph generated.
  3. Repeat step 2 and 4 with Vt adjust implant concentration of 9.5e12 cm-3
  4. Compare and discuss the structure, Id-Vgs curve simulated.

PMOS

OBJECTIVES:

  • To design 0.50μm PMOS.
  • To analyze PMOS I-V curve under different influent factors.

SIMULATION SOFTWARE:

Silvaco TCAD

METHODOLOGY:

Basic MOS ATHENA to ATLAS interface example simulating an Id/Vgscurve and extracting threshold voltage and other SPICE parameters. This experiment demonstrates:

  • Process simulation of a MOS transistor in ATHENA
  • Process parameter extraction (eg. oxide thickness)
  • Auto interface between ATHENA and ATLAS
  • Simple Id/Vgs curve generation with Vds=-0.1V
  • IV curve parameter extraction for Vt, Beta and Theta

The extract statement at the end of the file is used to measure the threshold voltage and other SPICE parameters. The results from the extract statements are printed in the run-time output, saved to a file called results.final and optionally used in the optimizer. One operator of particular use in PMOS device extraction is abs(). This takes the absolute value of a variable and can be used to make all PMOS and NMOS extractions equivalent.

Part A: Simulation of the existing PMOS example

  1. Double click on ‘deckbuild’ icon.
  2. Right click on ‘Main Control’ and choose ‘Examples’.
  3. Double click on ‘1 MOS1: MOS Application Examples’.

From the examples, double click on ‘1.8 mos1ex08.in:PMOS: Id/Vgs and Threshold Voltage Extraction’.

  1. Read the function of this example and left click on ‘Load example’ to load the commands of this example. Choose ‘Confirm’ from the pop-up notice.
  2. From the trace in middle, click ‘run’ to simulate the example.
  3. After a while, PMOS structure and its Id/Vgs curve will be simulated on pop-up “TonyPlot” platform.
  4. You can zoom in the PMOS structure by drawing a rectangle at the desired portion.
  5. The PMOS structure and the Id/Vgs curve can be saved on computer Desktop, in a folder named “tcad8’s Home” as postscript files by clicking the “Print” option on the “TonyPlot” platform. The postscript files named “print.out.0” can be viewed at Windows-operated computers using any online-downloaded postscript viewers, ormicrosoft word document by “inserting” the “postscript files” into the doc. From thepostscript viewer, the PMOS structure and the Id/Vgs curve can then be saved intoimage files (JPEG or TIFF). One of the examples of online postscript viewers isavailable at:
  6. In your report, sketch the Id/Vgs curves. The raw data of Id/Vgs curve can be obtained from the “tcad8’s Home” folder, from a file with “.log” extension.
  7. In your report, record the extraction value from the ‘result.final’ file. (eg. gate oxide thickness, Vt)

Part B: Effects of different influent factors on PMOS structure and Ids/Vgs curve