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3081 Zanker Road

San Jose, CA 95134-2127

Phone:408.943.6900 Fax: 408.943.7943

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Background Statement for SEMI Draft Document 4619

WITHDRAWAL OF SEMI M30-0997, STANDARD TEST METHOD FOR SUBSTITUTIONAL ATOMIC CARBON CONCENTRATION IN GaAs BY FOURIER TRANSFORM INFRARED ABSORPTION SPECTROSCOPY.

Note: This background statement is not part of the balloted item. It is provided solely to assist the recipient in reaching an informed decision based on the rationale of the activity that preceded the creation of this document.

Note: Recipients of this document are invited to submit, with their comments, notification of any relevant patented technology or copyrighted items of which they are aware and to provide supporting documentation. In this context, “patented technology” is defined as technology for which a patent has issued or has been applied for. In the latter case, only publicly available information on the contents of the patent application is to be provided.

Background

Standard Test Method M30-0997 – originally developed by the SEMI Japan Compound Semiconductor Committee - is no longer valid as the reference samples needed to standardize the local vibrational mode (LVM) Fourier Transform Infrared (FTIR) absorption measurement are no longer available.

An alternative FTIR experimental procedure not requiring reference samples has been defined and will be developed by a Global Task Force into a new document to replace the withdrawn standard test method.

The SNARF to initiate a yellow ballot for withdrawal of this standard test method was approved by the Global Compound Semiconductor Materials Committee on the 18th of July 2008

Purpose of SEMI M30-0997

Carbon concentration level is an important parameter in the production of semi-insulating GaAs substrates. This standard test method was intended to ensure that measurements made by different organizations would be consistent.

This is a draft document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted standard. Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development) activity. All other reproduction and/or distribution without the prior written consent of SEMI is prohibited.

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Semiconductor Equipment and Materials International

3081 Zanker Road

San Jose, CA 95134-2127

Phone:408.943.6900 Fax: 408.943.7943

hb khghgh1000A4248

The results of this ballot will be discussed at the next European Compound Semiconductor Technical Committee meeting on October 7, 2008 in conjunction with SEMICON Europa in Stuttgart, Germany.

If you need a copy of the document in order to cast a vote, please contact the following person within SEMI.

Saviour Alfino,

SEMI Europe,

Technology and Standards Coordinator.

Avenue des Arts 40,

1040 Brussels. Belgium.

Tel: (32) (2) 289.66.12

Mob: (32) (473) 54.09.20

This is a draft document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted standard. Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development) activity. All other reproduction and/or distribution without the prior written consent of SEMI is prohibited.

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