No. MOSIS MOSISDesigner(s), DateDescription
Proj. No. Fab.ID
------
1. 65008T26BDFYun, Goldsman, Jun'02Monolithic FSK
Transmitter
2. 65759T2AKAVYun, Goldsman, Oct'02
3. 65760T2AKBJYun, Goldsman, Oct'02
4. 65761T2AKBNYun, Goldsman, Oct'02
5. 65762T2AKBDYun, Goldsman, Oct'02Substrate noise
coupling analysis
6. 66962T33AACYun, Goldsman, Apr'03Substrate noise
coupling analysis
7. 66963T33AADYun, Goldsman, Apr'03Inductors/substrate
noise coupling analysis
8. 64639T26ZAYDilli, Goldsman, Jun'02Internal/external ring
osc., counters
(Measurements on the loading effectsof off-chip connections and
packaging).
9. 65046T26BBJDilli, Goldsman, Jun'02Internal/external ring
osc, counters
(Measurements on the loading effectsof off-chip connections and
packaging; delay measurement structures).
10. 65765T2AKASDilli, Goldsman, Oct'02 Three dimensional
ring osc., counters
(Chip designed for post-processing to create three-dimensionally
integrated ring oscillators and counters; measurements on the loading
effects of three-dimensional interchip vias.)
11. 68785T3AJALDilli, Goldsman, Oct'03 On-chip inductor
structures
12. 68786T3AJAMDilli, Goldsman, Oct'03 On-chip
digital/analog
coupling structures
(Chips designed for RF-probe station measurements: On-chip
digital and analog and RF structures, substrate coupling, digital
noise.)
13. 68865T3AJBVAkturk, Parker,Heaters and
Goldsman Oct'03temperature sensors
14. 68866T3AJCDAkturk, Parker,Heaters and
Goldsman Oct'03temperature sensors
15. 68893T3CUCFAkturk, Parker,Heaters and
Goldsman Oct'03temperature sensors
(Chips designed with on-chip heating elements like switching
digital circuits or polysilicon resistors and diodes as temperature
sensors, to study chip heating.)
16. 70241T46TAGDilli, Goldsman May'04Inductors
17. 70242T46TAFDilli, Goldsman May'04Inductors
(Inductor structures on different substrates; de-embedding
structures; for measurements on the substrate doping effect on
inductance.)
18. 70839T47FBHAkturk, Parker,Heaters and
Dilli, Goldsman Jul'04temperature sensors
19. 70840T47FCAAkturk, Parker,Heaters and
Dilli, Goldsman Jul'04temperature sensors
20. 70842T47FCDAkturk, Parker,Heaters and
Dilli, Goldsman Jul'04temperature sensors
(Chips designed with on-chip heating elements like switching
digital circuits or polysilicon resistors and diodes as temperature
sensors, to study chip heating.)
21. 71656T4BPATDilli, Goldsman Nov'04Inductors
22. 71657T4BPAVDilli, Goldsman Nov'04Inductors
23. 71690T4BPAUDilli, Goldsman Nov'04Transformers
24. 71691T4BPAWDilli, Goldsman Nov'04Inductors
25. 72095T51ABCDilli, Goldsman Jan'05Inductors
26. 72096T51ABADilli, Goldsman Jan'05Inductors/transf.
27. 72097T51ABB Dilli, Goldsman Jan'05 Inductors/transf.
(Inductors and transformers with varying substrates, different
coupling geometries; 3-D inductors; tunable inductors/transformers;
de-embedding structures.)
NOTE: All the chips listed above use the AMI C5N (0.5 micron) process
except 64639 (T26ZAY), which uses the AMI ABN (1.5 micron) process.
28. N/AN/ADilli, Goldsman May'05 3D self-powered
"dust" particle
(This design is submitted to and is currently in fabrication at the MIT
Lincoln Labs. It is based on the SOI technology and three-dimensional
stacking technique developed there. It includes three planar chip
(layer) designs: The first one is a photodiode array for power
harvesting, the second one houses a capacitor for power storage and
the third layer is a local oscillator to be powered by the other two
layers. The layers are connected by vertical through-vias. The
complete stack is expected to be about 250x250x800 microns in size.)