3rd International Symposium
on Practical Surface Analysis
and
5th Korea-Japan International
Symposium on Surface Analysis
October 4 (Mon.) – 6 (Wed.), 2004
Seogwipo KAL Hotel, Jeju, Korea
Organized by
Surface Analysis Society of Japan
and
Korean Vacuum Society
This symposium is supported by grants from the Korea Science and Engineering Foundation (KOSEF) and the Japan Society for the Promotion of Science (JSPS).
Session Schedule
8:00 – 19:00
Registration / 8:00 – 19:00
Registration / 8:00 – 13:30
Registration
8:00 – 9:40
Practical Application 3
Present Status of
Surface Analysis
In Korea and Japan
8:30 - 8:35
Opening / 8:30 – 9:40
Standardization
8:35 – 9:25
Plenary Talk
9:25 – 10:15
New Instrumentation
& Technology
9:40 – 9:50 Break / 9:40 – 10:00 Break
10:15 – 10:35 Break / 9:50 – 11:30
Practical Application 3
Present Status of
Surface Analysis
In Korea and Japan / 10:00 – 11:40
Practical Application 4
10:35 – 11:55
Fundamental
11:30 – 11:50 Break
11:55 – 13:25
Lunch / 11:50 – 13:30
Short Presentation
(one minute / poster) / 11:40 – 11:45
Closing
11:45 – 13:00
Lunch
13:25 – 14:45
Data Analysis
& Processing / 13:00 – 18:00
Excursion
13:30 – 14:50
Lunch
14:45 – 16:05
Practical Application 1
14:50 – 16:20
Poster Presentation 1
(Odd Number Poster)
15:00 – 19:00
Registration
16:05 – 16:25 Break
16:25 – 18:25
Practical Application 2 / 16:20 – 17:50
Poster Presentation 2
(Even Number Poster)
17:50 – 18:10
Voting for Powell Prize
18:00 – 21:00
Welcome Party / 18:10 – 19:00 Break
19:00 – 21:00
Banquet
The preparation for the poster presentation will be available from the morning of Oct. 4, 2004.
Seogwipo KAL Hotel
PSA-04 Program
The conference room is DIAMOND on the B1 floor.
October 3, 2004Registration 15:00-19:00
Welcome Party 18:00-21:00
October 4, 2004
Registration 8:00-19:00
Opening Remark 8:30-8:35
D. W. Moon (KRISS, Korea)
Plenary Talk (Chair: D. W. Moon and H. J. Mathieu) 8:35-9:25
O-01 / 8:35-9:25
(Invited) R. Shimizu* (*Osaka Inst. Technol., Japan)
Surface Characterization for Development of Cathode Material / C-Filament to Zr-O/W-Tip
New Instrumentation And Techniques (Chair: D. W. Moon and H. J. Mathieu) 9:25-10:15
O-02 / 9:25-9:55
(Invited) H. Iwai* (*ULVAC-PHI, Japan)
Recent Developments And Applications in AES And XPS
O-03 / 9:55-10:15
M. Terhorst,* F. Kollmer, R. Möllers, D. Rading and E. Niehuis (*ION-TOF GmbH, Germany)
TOF-SIMS Studies using Newly Developed Cluster Ion Sources (Aun, Bin, and C60) for Molecular Surface Analysis
Break 10:15-10:35
Fundamental (Chair: R. Shimizu and H. J. Shin) 10:35-11:55O-04 / 10:35-11:05
(Invited) G. Gergely,* M. Menyhard, S. Gurban and A. Jablonski (*Res. Inst. Technical Phys., Hungary)
Surface Excitation Correction for Elastic Peak Electron Spectroscopy (EPES)
O-05 / 11:05-11:35
(Invited) Z. J. Ding,* K. Salma, H. M. Li and Z. M. Zhang (*Univ. of Sci. and Technol. of China, China)
Quantification of Surface Effects in Electron Spectroscopy
O-06 / 11:35-11:55
L. Kövér,* S. Egri, I. Cserny, Z. Berényi, J. Tóth, D. Varga and W. Drube (*ATOMKI, Hungary)
Intrinsic Excitations in Deep Core Auger And Photoelectron Spectra of Ge And Si
Lunch 11:55-13:25
Data Analysis And Processing (Chair: Z. J. Ding and N. Winograd) 13:25-14:45
O-07 / 13:25-13:55
(Invited) C. J. Powell,* A. Jablonski, F. Salvat, S. Tanuma and D. R. Penn (*NIST, USA)
New Developments in Data for AES and XPS
O-08 / 13:55-14:25
(Invited) W. S. M. Werner* (*Vienna Univ. of Technol., Austria)
Simulation and Quantitative Interpretation of Electron Spectra for Surface Analysis
O-09 / 14:25-14:45
Z. Postawa, E. J. Smiley, I. Woichiechowski, M. F. Russo, N. Winograd and B. J. Garrison* (*Pennsylvania State Univ., USA)
Simulations of Cluster (C60) Bombardment of Solids
Practical Application 1 (Chair: Z. J. Ding and N. Winograd) 14:45-16:05
O-10 / 14:45-15:15
(Invited) Y. Park* (*KRISS, Korea)
Photoelectron Spectroscopy Studies of Cathode Contact in Organic EL Device
O-11 / 15:15-15:45
(Invited) H. J. Song, G. B. Kim, C. K. Hong, M. K. Lee and H. J. Shin* (*POSTECH, Korea)
SPEM Application to Inhomogeneous Microstructures : Lateral-Space-Resolved Probe on Over-Layer Thickness on Conducting Substrate
O-12 / 15:45-16:05
T. Ida, H. Sugimoto, D. Matsumoto and K. Endo* (*Kanazawa Univ., Japan)
Simulation of Thermal Decomposition for Polymer Molecules
Break 16:05-16:25
Practical Application 2 (Chair: W. S. M. Werner and K. Sasakawa) 16:25-18:25
O-13 / 16:25-16:55
(Invited) H. J. Mathieu,* X. Gao and D. J. Balazs (*Swiss Federal Inst. of Technol., Switzerland)
Plasma Modification of Biomaterials Controlled by Surface Analysis
O-14 / 16:55-17:25
(Invited) D. G. Castner* (*Univ. of Washington, USA)
TOF-SIMS Analysis of Surface Immobilized Biomolecules
O-15 / 17:25-17:55
(Invited) N. Winograd* (*Penn State Univ., USA)
The Magic of Cluster SIMS
O-16 / 17:55-18:25
(Invited) K. Sasakawa* (*KOBELCO Res. Inst., Japan)
Ultra Thin Film Analysis by High-Resolution Rutherford Backscattering Spectrometry
October 5, 2004
Registration 8:00-19:00Practical Application 3 –Present Status of Surface Analysis in Korea And Japan-
(Chair: Y. S. Park and H. Tohma) 8:00-9:40
O-17 / 8:00-8:20
H. Jin, S. W. Lee, H. J. Kang,* Y. S. Lee and M. H. Cho (*Chungbuk National Univ., Korea)
Temperature Dependence of Band Alignment at Ultrathin HfO2 And Al2O3/Si Interface
O-18 / 8:20-8:40
Y. Mori* (*NGK Insulators, Japan)
Practical Technique for Restraining Differential Charging in X-ray Photoelectron Spectroscopy: Os Coating
O-19 / 8:40-9:00
T. Nagatomi* (*Osaka Univ., Japan)
Surface Excitation Parameter Obtained by REELS Analysis
O-20 / 9:00-9:20
K. Yanagiuchi* and W. Okawa (*TDK, Japan)
Application of High-Resolution Rutherford Backscattering Spectroscopy for Process Control of Data Storage And Thin Film Technology Components
O-21 / 9:20-9-40
K. Meera, C. S. Yang and C. K. Choi* (*Cheju National Univ., Korea)
Bonding Structure of SiOC(-H) Thin Films Deposited Using MTMS And Oxygen As Precursors by Plasma Enhanced Chemical Vapor Deposition
Break 9:40-9:50
Practical Application 3 –Present Status of Surface Analysis in Korea And Japan-
(Chair: H. Iwai and J. C. Lee) 9:50-11:30
O-22 / 9:50-10:10
T. Kimura,* K. Nishida and S. Tanuma (*NIMS, Japan)
Development of A Submicron Analysis Wavelength Dispersive (WDS) EPMA with A Thermal Field Emission (FE) Type Electron Gun
O-23 / 10:10-10:30
D. W. Moon* (*KRISS, Korea)
Development of Reference Materials for nm Gate Oxide Thickness Determination
O-24 / 10:30-10:50
S. Araki* (*NISSAN ARC, Japan)
Secondary Electron Emission Coefficient Measurement Technique with Scanning Auger Microprobe
O-25 / 10:50-11:10
H. W. Yeom* (*Yunsei Univ., Korea)
Photoemission And STM Studies of Electronic Transition of Atomic Wires on Si Surfaces
O-26 / 11:10-11:30
Y. Abe* (*Mitsubishi Chem. Group Sci. and Technol. Res. Center, Japan)
Evaluation of Damage Cross Sections by Au Cluster Primary Ion Bombardment
Break 11:30-11:50
Poster Short Presentation (Chair: M. Suzuki, N. Suzuki and S. Suzuki) 11:50-13:30
One minute for one poster
Lunch 13:30-14:50
Poster Presentation 1 (Chair: M. Suzuki, N. Suzuki and S. Suzuki) 14:50-16:20 (CRYSTAL room)
Odd poster number
Poster Presentation 2 (Chair: M. Suzuki, N. Suzuki and S. Suzuki) 16:20-17:50 (CRYSTAL room)
Even poster number
Powell Prize Voting (Chair: M. Suzuki, N. Suzuki and S. Suzuki) 17:50-18:10 (CRYSTAL room)
Break 18:10-19:00
Banquet 19:00-21:00
October 6, 2004
Registration 8:00-13:30Standardization (Chair: C. J. Powell and S. Tanuma) 8:30-9:40
O-27 / 8:30-9:00
(Invited) M. P. Seah* (*NPL, UK)
Accurate Thickness Measurements in Thin Films with Surface Analysis
O-28 / 9:00-9:20
M. Tomita,* H. Tanaka, M. Koike and S. Takeno (*Toshiba, Japan)
Depth Resolution Parameters And Sputtering Rates Extracted from Amorphous and Crystal Silicon Materials for SIMS Shallow Depth Profiling
O-29 / 9:20-9:40
D. S. Simons,* P. H. Chi and K. J. Kim (*NIST, USA)
Quantitative Measurement of Arsenic Implant Dose by SIMS
Break 9:40-10:00
Practical Application 4 (Chair: D. G. Castner and M. P. Seah) 10:00-11:40
O-30 / 10:00-10:30
(Invited) J. C. Lee,* J. H. Lee, J. Y. Won, I. Asanov, C. B. Lim, K. J. Kim and D. W. Moon (*SAIT, Korea)
A Method for Sputtered Depth Determination in XPS/AES Sputter Depth Profiling Using Delta-Layers in Si
O-31 / 10:30-11:00
(Invited) H. Tohma* (*NISSAN ARC, Japan)
Evaluation of Sample Surface Degradation Caused During XPS Analysis
O-32 / 11:00-11:20
M. Arai,* M. Hamanaka, H. Hayamizu, T. Kimura, K. Nishida and S. Tanuma (*Sumitomo Metal Industries, Japan)
Quantitative Evaluation of Electron Irradiation Damage with Low Energy Auger Peaks on Aluminum Oxide formed on Galvanized Steel Sheet
O-33 / 11:20-11:40
D. R. Baer,* M. H. Engelhard, A. S. Lea, D. J. Gaspar, K. H. Pecher and C. Wang (*PNNL, USA)
Challenges in Applying Surface Analysis Methods to Nanoparticles and Nanostructured Materials
Closing Remark 11:40-11:45
M. Suzuki (ULVAC-PHI, Japan)
Lunch 11:45-13:00
Excursion 13:00-18:00
Poster Presentation
· The size of the poster panel is 100 cm in width and 180 cm in height.
· Location of the poster presentation is CRYSTAL room on the first floor. Presenters are requested to mount their posters on the panels assigned by the poster numbers in the morning of October 4, 2004.
· The presenters, corresponding to odd or even poster numbers, shall attend their own posters and perform poster discussion during the Poster Presentation 1 or Poster Presentation 2, respectively.
· The presenters are assigned to give their short oral presentation in the last morning session of October 5, 2004. The presentation time is one minute a poster presentation, including a time for moving to the next speaker. Each presentation is stopped by Chair when one minute has passed. Only the overhead projector for a viewgraph is available for the poster short presentation. The next several speakers should wait for their turn in line near the present speaker in order to move to the next presentation.
Poster presentation
P-01 / P. Chapon,* P. Ayasse, M. Haboudou and C. Olivero-Tauziede (*Jobin Yvon SA, France)New Developments in RF Glow Discharge Optical Emission Spectrometry Extend the Range of Applications
P-02 / F. Horréard,* F. Hillion and C. J. Simensen (*CAMECA, France)
High Lateral Resolution SIMS in Material Science: Various Applications of The NanoSIMS
P-03 / Y. Sato,* A. Suzuki, H. Nonaka, S. Ichimura, M. Inoue and Y. Nihei (*AIST, Japan)
Evaluation of Surface Roughening at Low-energy Ion Sputtering -Roughness Decreasing by Ozone Exposure-
P-04 / M. Satoh,* S. Shirai and Y. Hori (*Fujitsu Anal. Lab., Japan)
Deposition Technique with FIB for Isolated Area of Specimen in AES Analysis
P-05 / T. Awane,* T. Kimura, K. Nishida, T. Aoyagi and S. Tanuma (*NIMS, Japan)
Removal of X-Ray Absorbers on An Etched Surface of Metallic Materials with Focused Ion Beam for Grazing Exit Electron Probe Microanalysis
P-06 / T. Sakurada,* S. Hashimoto, Y. Tsuchiya, S. Tachibana, M. Suzuki and K. Shimizu (*Kokan Keisoku, Japan)
Lateral Resolution of EDXS Analysis with Ultra Low Acceleration Voltage SEM
P-07 / T. Kimura,* K. Nishida and S. Tanuma (*NIMS, Japan)
Optimum Condition for Minute Region Analysis in FE-EPMA
P-08 / K. Tanaka,* A. Nagata, N. Sasayama, M. Ikeda, A. Odawara, S. Nakayama and K. Chinone (*SII Nano Technol., Japan)
A Microcalorimeter EDS System for Electron Beam Excitation And Applications
P-09 / Y. Teraoka,* D. Sakai, Y. Kita, H. Iwai, M. Taguchi and R. Oiwa (*JAERI, Japan)
Fast X-ray Photoemission Spectroscopy by Using A 64-Channel Electron Detector
P-10 / H. Yasufuku,* H. Yoshikawa, M. Kimura, M. Kato, M. Kudo and S. Fukushima (*NIMS, Japan)
Observation of Micro-Area Photoelectron Spectra And Energy Filtered Image Using XPEEM at Spring-8 BL15
P-11 / J. Kawai,* H. Ishii, S. Matsuo, H. Wakita and K. Tanaka (*Kyoto Univ., Japan)
Chemical Shift of Si And Charge State of Metal Silicides
P-12 / H. W. Choi,* H. J. Woo, W. Hong, C. H. Eum, J. K. Kim and G. D. Kim (*KIGAM, Korea)
Development of A Micro-Beam PIXE System in KIGAM
P-13 / J. W. Lee, K. S. Yu* and S. J. Ku (*K-MAC, Korea)
Development And Principle Study of Fine Area Thickness Map Measurement Equipment
P-14 / J. H. Kim,* C. W. Lee, R. J. W. E. Lahaye and H. Kang (*Seoul National Univ., Korea)
Cs+ Reactive Ion Scattering for Physisorbed And Chemisorbed Molecules on A Pt(111) Surface: Experiment And Theory
P-15 / C. W. Lee* and H. Kang (*Seoul National Univ., Korea)
The Transformation of Alanine Molecules on Ice Surface
P-16 / J. W. Lee* (*Hallym Univ., Korea)
Ion Induced Auger Electron Spectroscopy As A Sensitive Method for Studying The Vibrational Correlation
P-17 / Withdrawn
P-18 / Y. Kimura, T. Hiroi, S. Shimada, M. Mizuno, K. Endo* and E. Z. Kurmaev (*Kanazawa Univ., Japan)
X-Ray Photoelectron And C Ka Emission Spectral Analysis of Polymers by Density-Functional Theory Calculations using Hybrid Methods
P-19 / W. S. M. Werner* (*Vienna Univ. of Technol., Austria)
Trajectory Reversal Approach to Quasi-Elastic Electron Backscattering from Solid Surfaces
P-20 / A. Tanaka* (*ULVAC-PHI, Japan)
Analytical Formula for Analysis Areas for XPS Angle Dependent Analysises
P-21 / T. Ohgi,* Y. Sakotsubo, D. Fujita and Y. Ootuka (*Univ. of Tsukuba, Japan)
Single Electron Charging Effect in Supported Nanoclusters: Comparison Between Photoelectron Spectroscopy And Tunneling Spectroscopy
P-22 / S. Suzuki* and K. Kakita (*Tohoku Univ., Japan)
A Comparative Studies of GDOES, SIMS and XPS Depth Profiling of Thin Film Layers
P-23 / M. Suzuki,* M. Kaise, T. Kimura, I. Nakatani and S. Tanuma (*ULVAC-PHI, Japan )
Problems Caused by Ion sputtering for the Mesh-Replica Method and Cautions in Measuring Sputtered Surface Shapes
P-24 / R. Shin-ya,* M. Inoue and S. SERD Project (*Sumitomo Metal Technol., Japan)
Effects of The Mesh Pitch And The Ion Beam Raster Size on The Sputter Etching Rate of SiO2 Measured by The Mesh-Replica Method
P-25 / K. J. Kim* and D. W. Moon (*KRISS, Korea)
Development of Standard Reference Materials for Semiconductor Analysis
P-26 / J. D. Geller* (*Geller Microanalytical Lab., USA)
Are Calibration Standards Really Necessary for Auger Electron Spectroscopy?
P-27 / N. Fukumoto,* M. Jo and I. Kojima (*AIST, Japan)
Calibration of Energy And Intensity Scales for Standardization of Electron Spectroscopy Spectra Database
P-28 / S. Tanuma,* T. Kimura, Y. Tsukamoto and S. Ito (*NIMS, Japan)
A Round Robin Study of Quantitative Evaluation of Electron Beam Damage on SiO2 Specimen in AES Analysis