Ultra-Compact (MSOP8) Automotive-Grade SPI Bus Eeproms

Ultra-Compact (MSOP8) Automotive-Grade SPI Bus Eeproms

PR 221-2017/ROHM

PCIM 2017: ROHM UnveilsIts 3rd Generation of IGBT

New generation features advanced cell structure for high circuit efficiency and soft switching.

Willich-Münchheide/Nuremberg,Germany, May 16th2017 – At PCIM, the leading trade fair for Power Electronics, Intelligent Motion and Energy Management in Nuremberg ROHM Semiconductorhas announced the technology ofthe3rd Generation 650V IGBT family (Hall 9, Booth 316). With their most advanced structure and beneficial characteristics they provide an ideal solution for soft and highly efficient switching in industrial applications and home appliances.

Power semiconductors including IGBT technologies are getting increasingly popular by being deployed in many kinds of high voltage applications.Yet, these components are expected to achieve high efficiency and reliability while maintaining low loss levels. Expanding its existing line-up of high current capability IGBTs and IGBTs featuring lower saturation voltage and faster switching, ROHM now introduces its 3rd generation of IGBTs for high-efficiency. The new devices make use of athinner wafer structure as well as field stop and proprietary Trench Gate technologies for state-of-the-art performance, to meet the growing need for high frequency switching.

Based on an advanced field stop structure, ROHM’s new 3rd Generation 650V IGBTs offers a smallercarrier concentration gradient in the drift region leading to a better carrier distribution. Due to this fact, lower saturation voltage and faster switching becomes possible, overcoming the trade-off between saturation voltage and turn-off loss characteristics of conventional solutions.

Also, ROHM applied a sophisticated trench gate structure reducing gate charge and capacitance. An optimized doping and cell structure, combined with a 15% thinner wafer compared to the 2nd generation,significantly decreases the total loss of the device. During conductive phase, there is less carrier concentration resulting in lower switching losses during turn-off. Moreover, the new devices keep a soft switching behaviour even at a low external gate resistance. Measurement results show low noise performance even when keeping higher switching speed.Miniaturisation and superior characteristics result in a reduction of the saturation voltage by 6% and of the turn-off switching loss by 20% compared with the 2nd generation, overall allowing for enhanced system performance.

The 3rd Gen 650V IGBT line-up consists of30/50/80A types in RGTV Series and 30/40/50A in RGW series,comes in two differentpackages - TO-247N and TO-3PFM - and two optimized series: The RGTV series is designed for applications demanding advanced short circuit safety, the RGW series isspecially adapted for converters, offering low gate charge, capacitance and extremely low switching loss. Both are integrated with a very fast and soft recovery FRD foroptimum efficiency.


Samples are available, OEM quantities will be starting fromSummer 2017. (Please note that it differs depending on each product.)

For more info about ROHM at PCIM please visit:

About ROHM Semiconductor

ROHM Semiconductor is a global company of 352,010 million yen (3,23billion US$) revenue per March 31th, 2017 with 21,308 employees. ROHM Semiconductor develops and manufactures a very large product range from the Ultra Low Power Microcontroller, Power Management, Standard ICs, SiC Diodes, MOSFETs and Modules, Power Transistors and Diodes, LEDs to passives components such as Resistors, Tantalum Capacitors and LED display units, thermal Printheads in state-of-the-art manufacturing plants in Japan, Korea, Malaysia, Thailand, the Philippines, China and Europe.

LAPIS Semiconductor (former OKI Semiconductor), SiCrystal AG, Kionixare companies of ROHM Semiconductor Group.

ROHM Semiconductor Europe has its head office near Dusseldorf serving the EMEA region (Europe, Middle East and Africa). For further information please contact

Contact Information:

ROHM Semiconductor GmbHKEK Concept GmbH

Marketing CommunicationDepartmentEvelyn Stepken

Karl-Arnold-Str. 15Hofer Str. 1

D-47877 Willich-MünchheideD-81737 Munich


Phone: +49 2154 921 0Phone: +49 89 673 461-30

Fax: +49 2154 921450Fax: +49 89 673 461-55

E-mail: -mail:


PCIM 2017: ROHM Unveils Its 3rd Generation of IGBT