DOC/LP/01/28.02.02

/ LESSON PLAN / LP – EC6201
LP Rev. No: 00
Date:16/01/2014
Page 01 of 06
Sub Code & Name: EC 6201–ELECTRONIC DEVICES
Unit : I Branch : EC Semester :II

UNIT I SEMICONDUCTOR DIODE 9

PN junction diode, Current equations, Diffusion and drift current densities, forward and reverse bias characteristics, Switching Characteristics.

Objective:To acquaint the students with the construction, theory and operation of PN junction diode.

Session No. / Topics to be covered / Time / Ref. / Teaching Method
Introduction to the syllabus, Atoms, Atomic Models, Atomic Energy band / 50m / 1,4,5 / BB
Classification of solids based on energy band theory (insulators, conductors and semiconductors- Types) / 50m / 1,4,5 / BB
Mobility and conductivity, Intrinsic Semiconductors – Electrons and Holes in the semiconductors. / 50m / 1,4,5 / BB
Extrinsic semiconductors – Donor and Acceptor impurities, PN junction – Open circuited / 50m / 1,4,5 / BB
PN junction Diode – Reverse and Forward bias, VI characteristics / 50m / 1,4,5 / BB
Current components in PN diode-Diode current, Reverse saturation current, Majority carrier current components / 50m / 1,4,5 / BB
Current Equations – Diffusion and Drift current / 50m / 1,4,5 / BB
Switching Characteristics of PN Diode / 50m / 1,4,5 / BB
Tutorial / 50m / 1,4,5 / BB

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/ LESSON PLAN / LP – EC6201
LP Rev. No: 00
Date:16/01/2014
Page 02 of 06
Sub Code & Name: EC 6201 – ELECTRONIC DEVICES
Unit : II Branch : EC Semester : II

UNIT II BIPOLAR JUNCTION 9

NPN - PNP–Junctions-Early effect-Current equations – Input and Output characteristics of CE, CB, CC-Hybrid -π model - h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi Emitter transistor.

Objective: To acquaint the students with the construction, theory and operation of Bipolar Junction Transistors.

Session
No. / Topics to be covered / Time / Ref. / Teaching Method
NPN - PNP – Junctions / 50m / 1,4,5 / BB
Early effect / 50m / 1,4,5 / BB
Current equations / 50m / 1,4,5 / BB
CB- Input and Output characteristics / 50m / 1,4,5 / BB
CE - Input and output characteristics / 50m / 1,4,5 / BB
Hybrid -π model, h-parameter model / 50m / 1,4,5 / BB
Ebers Moll Model / 50m / 1,4,5 / BB
Gummel Poon-model / 50m / 6,7 / OHP
Multi Emitter transistor / 50m / 6,7 / OHP
CAT –I / 180m

DOC/LP/01/28.02.02

/ LESSON PLAN / LP – EC6201
LP Rev. No: 00
Date:16/01/2014
Page 03 of 06
Sub Code & Name: EC 6201 – ELECTRONIC DEVICES
Unit : III Branch : EC Semester : II

UNIT III FIELD EFFECT TRANSISTORS 9

JFETs – Drain and Transfer characteristics -Current equations-Pinch off voltage and its significance– MOSFET- Characteristics- Threshold voltage-Channel length modulation, D-MOSFET, E-MOSFET-Current equation - Equivalent circuit model and its parameters, FINFET,DUAL GATE MOSFET.

Objective: To acquaint the students with the construction, theory and operation offield effect transistors.

Session No. / Topics to be covered / Time / Ref. / Teaching Method
Introduction to Field Effect Transistors, Construction
and Operation of JFETs / 50m / 1,4,5 / BB
JFETs – Drain and Transfer characteristics, JFET parameters / 50m / 1,4,5 / BB
Expression for Saturation Drain Current, Pinch-off voltage
and its significance / 50m / 1,4,5 / BB
MOSFET – Construction and Operation / 50m / 1,4,5 / BB
Characteristics of D-MOSFET, E-MOSFET / 50m / 1,3,5 / BB
Threshold Voltage, Effect of Channel Length Modulation -
D-MOSFET, E- MOSFET / 50m / 1,3,5 / BB
Current Equation – Equivalent Circuit Model and its parameters / 50m / 1,3,5 / BB
FINFET / 50m / 6,7 / OHP
Dual Gate MOSFET / 50m / 6,7 / OHP

DOC/LP/01/28.02.02

/ LESSON PLAN / LP – EC6201
LP Rev. No: 00
Date:16/01/2014
Page 04 of 06
Sub Code & Name: EC 6201 – ELECTRONIC DEVICES
Unit : IV Branch : EC Semester : II

UNIT IV SPECIAL SEMICONDUCTOR DEVICES 9

Metal-Semiconductor Junction- MESFET, Schottky barrier diode-Zener diode-Varactor diode Tunnel diode- Gallium Arsenide device, LASER diode, LDR.

Objective: To study about the special semiconductor devices.

Session No. / Topics to be covered / Time / Ref. / Teaching Method
Metal-Semiconductor Junction / 50m / 5 / BB
MESFET / 50m / 5,6,7 / OHP
Schottky barrier diode / 50m / 1,5 / BB
Zener diode / 50m / 1,2,4,5 / BB
Varactor diode / 50m / 1,2,4,5 / BB
Tunnel diode / 50m / 1,2,4,5 / BB
Gallium Arsenide device / 50m / 5,6,7 / BB
LASER diode / 50m / 5,6,7 / BB
LDR / 50m / 5,6,7 / OHP
CAT-II / 180m

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/ LESSON PLAN / LP – EC6201
LP Rev. No: 00
Date:16/01/2014
Page 05 of 06
Sub Code & Name: EC 6201 – ELECTRONIC DEVICES
Unit : V Branch : EC Semester : II

UNIT V POWER DEVICES AND DISPLAY DEVICES 9

UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Photo transistor, Opto Coupler, Solar cell, CCD.

Objective:To acquaint the students with the construction, theory and operationpower control devices, LED,LCD, and other Opto-electronic devices.

Session No. / Topics to be covered / Time / Ref. / Teaching Method
UJT / 50m / 1,4,5 / BB
SCR / 50m / 1,4,5 / BB
DIAC / 50m / 1,4,5 / BB
TRIAC / 50m / 1,4,5 / BB
Power BJT / 50m / 6,7 / BB
Power MOSFET – DMOS,VMOS / 50m / 6,7 / BB
43. / LED, LCD / 50m / 6,7 / BB
44. / Phototransistor, Optocoupler / 50m / 2,6,7 / BB
45. / Solar cell, CCD / 50m / 2,6,7 / BB

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/ LESSON PLAN / LP – EC6201
LP Rev. No: 00
Date:16/01/2014
Page 06 of 06

Sub Code & Name: EC 6201 – ELECTRONIC DEVICES

Branch : EC Semester : II

Course Delivery Plan:

Week / 1 / 2 / 3 / 4 / 5 / 6 / 7 / 8 / 9 / 10 / 11 / 12 / 13 / 14 / 15
I II / I II / I II / I II / I II / I II / I II / I II / I II / I II / I II / I II / I II / I II / I II
Units / 1 / 1 / 1 / 1 / 1 / 1 / 2 / 2 / 2 / 2 / 2 / 2 / C
A
T
1 / 3 / 3 / 3 / 3 / 3 / 4 / 4 / 4 / 4 / C
A
T
2 / 5 / 5 / 5 / 5 / 5 / 5 / 5
TEST - I / TEST - II / TEST - III / TEST - IV / TEST - V / TEST - VI / TEST - VII

TEXT BOOKS

1. Donald A Neaman, “Semiconductor Physics and Devices”, Third Edition, Tata Mc GrawHill Inc., 2007.

References

2. Yang, “Fundamentals of Semiconductor devices”, McGraw Hill International Edition, 1978.

3. Robert Boylestad and Louis Nashelsky, “Electron Devices and Circuit Theory” Pearson PrenticeHall,

10th edition,July 2008.

4. R.S.Sedha., “A Text Book of Applied Electronics”, S.Chand Publications, 2002.

5. Salivahanan. S, Suresh Kumar. N, Vallavaraj.A, “Electronic Devices and circuits”,First Edition,Tata

McGraw- Hill, 1999.

6.

7.

Prepared by / Approved by

Signature

Name / Mr.S.R.Balasubramanian, Ms.T.J.Jeyaprabha,
Ms.C.Gomatheeswari Preethika. / Dr.S. Ganesh Vaidyanathan
Designation / AP / HOD, Department of ECE
Date / 16/01/2014 / 16/01/2014