BIOGRAPHICAL SKETCH

Provide the following information for the Senior/key personnel and other significant contributors in the order listed on Form Page 2
Follow this format for each person. DO NOT EXCEED 4 PAGES.
NAME
Sanjay Krishna / POSITION TITLE
Professor/Regents’ Lecturer, Electrical and Computer Engineering Department
Chief Technology Officer, SKINfrared LLC
EDUCATION/TRAINING
INSTITUTION AND LOCATION / DEGREE
(if applicable) / YEAR(s) / FIELD OF STUDY
S.S.I.H.L Bangalore / B. Sc (Hons) / 1994 / Physics
Indian Institute of Technology, Madras / M.Sc / 1996 / Physics
University of Michigan Ann Arbor / M.S. / 1999 / Electrical Engineering
University of Michigan Ann Arbor / Ph D / 2001 / Applied Physics

A.  Personal Statement

MY SIGNIFICANT RESEARCH ACHIEVEMENTS

·  Demonstration of first Plasmonic Quantum Dot Focal Plane Array: In collaboration with Prof. Brueck’s group at UNM, demonstrated resonant enhancement in a 320x256 focal plane array (Nature Comm, 2011)

·  Design and Development of Quantum Dots in a Well Infrared Detectors: In Aug 2002, published the first paper on quantum dots in a well detectors, which are now being pursued by at least ten research groups around the world.

·  Demonstration of InAs FETs on Silicon Substrates: In collaboration with Prof. Ali Javey’s group, we demonstrated InAs FETs on silicon substrates with large on-off ratio and small leakage current (Nature, 2010)

·  Demonstration of the first FPA with strain layer superlattice based on nBn Design In collaboration with QmagiQ LLC, we have demonstrated the first MWIR InAs/GaSB SLS array with a nBn design using a 320x256 focal plane array with a noise equivalent temperature difference of 24mK at 77K

·  Demonstration of the first 640x512 Quantum Dot based Camera: In collaboration with NASA JPL, we have demonstrated the first quantum dot camera using a 640x512 focal plane array with a noise equivalent temperature difference of 40mK at 60K

·  Demonstration of the first two color Quantum Dot based Camera In collaboration with QmagiQ LLC, we have demonstrated the first two color (MWIR/LWIR) quantum dot camera using a single bump 320x256 focal plane array.

·  Demonstration of the first long wave infared Quantum Dot based Camera In collaboration with BAE systems and a spin-off from UNM, Zia Laser Inc, we have demonstrated the first two long wave infrared (LWIR) QD camera based on a 320x256 focal plane array.

·  Demonstration of three color (MWIR/LWIR/VLWIR) DWELL detector We have recently demonstrated a 3 color quantum dot in a well detector with response in the MWIR (lp~4mm), LWIR (lp~8 mm) and VLWIR (lp~23 mm) at 80K. This is the highest reported temperature for any intersubband VLWIR detector.

·  Operating Wavelength Control in DWELL detectors

By heterostructure engineering of the DWELL structure, we have obtained spectral response tailorable from 7.2 to 10 m, culminating in a single pixel detector spanning the entire LWIR atmospheric window (8-12 m).

·  Demonstration of Smart DWELL Sensors

We have observed quantum confined Stark effect in the DWELL detectors that we have fabricated. The raw data was fed into a projection algorithm developed by Prof. Hayat and Prof. Tyo to realize a “smart” detectors whose center wavelength and spectral width could be independently controlled.

·  Strain patterning of growth front to achieve uniform QDs

Using a layer of buried InAlAs stressor dots, InAs QDs with very low size fluctuations (PL linewidth =19 meV at T=17K) and increased areal density (~2x1011cm-2) were grown on a GaAs substrate

·  Demonstration of the first quantum dot laser grown on a Si substrate Using a thermally cycled buffer layer, we demonstrated the first InGaAs QD laser grown on a silicon substrate. The large lattice and thermal mismatch between GaAs and Si created many dislocations and an optimized buffer layer was designed to filter these dislocations.

·  First demonstration of intersubband emission from QDs

Demonstration of the first quantum dot intersubband LED and first demonstration of intraband gain and stimulated emission from self organized quantum dots at 13 mm.

B.  Positions and Honors

Positions:

1995 Visiting Student Researcher, Tata Inst. Fundamental Research, India

1996-1997 Graduate Student Assistant, Tata Inst. Fundamental Research, India

1997-1998 Graduate Student Instructor, University of Michigan, Ann Arbor

1998-2001 Graduate Student Research Assistant, University of Michigan, Ann Arbor

2001-2006 Assistant Professor, ECE Dept, University of New Mexico, Albuquerque

2006-2010 Associate Professor, ECE Dept, University of New Mexico, Albuquerque

2010-Present Professor, ECE Dept, University of New Mexico, Albuquerque

2009-2012 Associate Director, Center for High Technology Materials, University of New Mexico

2009-2012 UNM Regents Lecturer

2010-Present Chief Technology Officer, SK Infrared LLC, Albuquerque

Honors:

1996 Gold Medal from Indian Institute of Technology, Madras

1997 First in Grad School of Physics at Tata Institute of Fundamental Research

1997 Graduate Student Fellowship, Dept. of Physics, University of Michigan

1998 Best student paper award at North American Molecular Beam Epitaxy Conference

2003 Outstanding Young Engineer Award by IEEE Albuquerque Chapter

2004 ECE Outstanding Researcher Award

2004 Oak Ridge Associated Universities Ralph Powe Jr. Faculty Enhancement Award

2005 School of Engineering Junior Faculty Teaching Award

2007 North American Molecular Beam Epitaxy Young Investigator Award

2007 Defense Intelligence Agency Chief Scientist Award for Excellence

2008 IEEE-Nanotechnology Council Early Career Achievement Award

2008 SPIE Early Career Achievement Award

2009 UNM School of Engineering Sr. Research Excellence Award

2009 UNM Regents Lecturer Award

2010 UNM Teacher of the Year Award

2010 Fellow, SPIE

2010 Sr. Gledden Fellow, University of Western Australia

2011 Lange Lecturer in Materials, University of California, Santa Barbara

2011 ECE Gardner-Zemke Award for Research Excellence

C.  Selected Peer-reviewed Publications

· Nutan Gautam, Stephen Myers, Ajit V. Barve, IEEE, Brianna Klein,Edward. P. Smith, Dave. R. Rhiger, Ha Sul Kim, Zhao-Bing Tian, and Sanjay Krishna, “Barrier Engineered Infrared Photodetectors Based on Type-II InAs/GaSb Strained Layer Superlattices”, IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 49, NO. 2, FEBRUARY (2013)

· J. O. Kim, S. Sengupta, A. V. Barve, Y. D. Sharma, S. Adhikary, S. J. Lee,S. K. Noh, M. S. Allen, J. W. Allen, S. Chakrabarti, and S. Krishna, “Multi-stack InAs/InGaAs sub-monolayer quantum dots infrared photodetectors”, APPLIED PHYSICS LETTERS 102, 011131 (2013)

· Nutan Gautam, Stephen Myersa, Ajit V. Barve, Brianna Klein, E.P. Smith, Dave Rhiger, Elena Plis, Maya N. Kutty , Nathan Henry, Ted Schuler-Sandy, S. Krishna, “Band engineered HOT midwave infrared detectors based on type-II InAs/GaSb strained layer superlattices” Infrared Physics & Technology (2013)

· Woo-Yong Jang, Majeed M. Hayat, Payman Zarkesh-Ha, and Sanjay Krishna, “Continuous time-varying biasing approach forspectrally tunable infrared detectors”, OPTICS EXPRESS 29823 Vol. 20, No. 28 December (2012)

· V. M. Cowan, C. P. Morath, J. E. Hubbs, S. Myers, E. Plis, and S. Krishna, “Radiation tolerance characterization of dual band InAs/GaSb type-II strain-layer superlattice pBp detectors using 63 MeV protons”, APPLIED PHYSICS LETTERS 101, 251108 (2012)

· G. A. Umana-Membreno, B. Klein, H. Kala,J. Antoszewski, N. Gautam, M. N. Kutty, E. Plis, S. Krishna, and L. Faraone, “Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices” ,APPLIED PHYSICS LETTERS 101, 253515 (2012)

· Eric A. DeCuir, Jr. ; Gregory P. Meissner ; Priyalal S. Wijewarnasuriya ; Nutan Gautam ; Sanjay Krishna ; Nibir K. Dhar ; Roger E. Welser ; Ashok K. Sood, “Long-wave type-II superlattice detectors with unipolar electron and hole barriers”, Opt. Eng. 51(12), 124001 (Dec 03, 2012).

· Nutan Gautam, Ajit Barve, and Sanjay Krishna, “Identification of quantum confined interband transitions in type-II InAs/GaSb superlattices using polarization sensitive photocurrent spectroscopy”, Appl. Phys. Lett. 101, 221119 (2012)

· Barve, A.V.; Sengupta, S.; Jun Oh Kim; Montoya, J.; Klein, B.; Shirazi, M.A.; Zamiri, M.; Sharma, Y.D.; Adhikary, S.; Godoy, S.E.; Woo-Yong Jang; Fiorante, G.R.C.; Chakrabarti, S.; Krishna, S. “Barrier Selection Rules for Quantum Dots-in-a-Well Infrared Photodetector IEEE Journal of Quantum Electronics”, Volume: 48 , Issue: 10 2012 , PP: 1243 – 1251(2012)

· T. Schuler-Sandy, S. Myers, B. Klein, N. Gautam, P. Ahirwar, Z.-B. Tian, T. Rotter, G. Balakrishnan, E. Plis, and S. Krishna, “Gallium free type II InAs/InAsxSb1-x superlattice photodetectors”, Appl. Phys. Lett. 101, 071111 (2012)

· Nutan Gautam,S. Myers, A. V. Barve, Brianna Klein, E. P. Smith, D. R. Rhiger,L. R. Dawson, and S. Krishna, “High operating temperature interband cascade midwave infrared detector based on type-II InAs/GaSb strained layer superlattice”, Appl. Phys. Lett. 101, 021106 (2012)

· S. Sengupta, J. O. Kim, A. V. Barve, S. Adhikary, Y. D. Sharma, N. Gautam, S. J. Lee,S. K. Noh, S. Chakrabarti, and S. Krishna, “Sub-monolayer quantum dots in confinement enhanced dots-in-a-well Heterostructure”, APPLIED PHYSICS LETTERS 100, 191111 (2012).

· A.V. Barve, S. Meesala, S. Sengupta, J. O. Kim, S. Chakrabarti and S. Krishna, “Investigation of Non-uniform Electric Field in Intersubband Quantum Infrared Photodetectors” Applied Physics Letters, Vol.100, pp.191107, 2012,

· P Martyniuk, J Wr´obel, E Plis, P Madejczyk, A Kowalewski, WGawron, S Krishna and A Rogalski, “Performance modeling of MWIR InAs/GaSb/B–Al0.2Ga0.8Sb type-II superlattice nBn detector”, Semicond. Sci. Technol. 27 (2012)

· Hui Fang, Steven Chuang, Kuniharu Takei, Ha Sul Kim, Elena Plis, Chin-Hung Liu, Sanjay Krishna, Yu-Lun Chueh, and Ali Javey, “Ultrathin-Body High-Mobility InAsSb-on-Insulator Field-Effect Transistors”, IEEE ELECTRON DEVICE LETTERS, VOL. 33, NO. 4, APRIL 2012

· Kuniharu Takei, Morten Madsen, Hui Fang, Rehan Kapadia, Steven Chuang,Ha Sul Kim, Chin-Hung Liu, E. Plis, Junghyo Nah, Sanjay Krishna, Yu-Lun Chueh,Jing Guo, and Ali Javey, “Nanoscale InGaSb Heterostructure Membranes on Si Substrates for High Hole Mobility Transistors” , Nano Letters, 12 March, (2012).

· Elena A. Plis, Maya Narayanan Kutty, and Sanjay Krishna, “Passivation techniques for InAs/GaSb strained layer superlattice detectors”, Laser Photonics Rev., 1–15 (2012)

· E.A. Plis,M.N. Kutty,S. Myers,A. Rathi,E.H. Aifer,I. Vurgaftman, and S. Krishna, “Performance improvement of long-wave infrared InAs/GaSb strained-layer superlattice detectors through sulfur-based passivation”, Infrared Physics & Technology February (2012)

· D. Lackner , M. Steger M. L. W. Thewalt, O. J. Pitts, Y. T. Cherng, S. P. Watkins, E. Plis, and S. Krishna, “InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations”, J. Appl. Phys. 111, 034507 (2012)

· A. V. Barve and S. Krishna, “Photovoltaic quantum dot quantum cascade infrared photodetector”, Appl. Phys. Lett. 100, 021105 (2012)

· S. C. Lee, Y. D. Sharma, S. Krishna and S. R. J. Brueck, “Leaky-mode effects in plasmonic-coupled quantum dot infrared photodetectors”, Appl. Phys. Lett. 100, 011110 (2012)

Program Director/Principal Investigator: Krishna, Sanjay

D.  Research Support

PHS 398/2590 (Rev. 06/09

Biographical Sketch Format Page

Biographical sketch: Sanjay Krishna