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Date: 22//06//2010
Page 01 of 06
Sub Code & Name: EC1403- MICROWAVE ENGINEERING
Unit : I Branch : EC Semester :VIIUNIT I S – PARAMETERS 9
Microwave Frequencies, Microwave Devices, Microwave Systems, Microwave Units of Measure, Microwave Hybrid Circuits, Waveguide Tees, Magic Tees (Hybrid Trees), Hybrid Rings (Rat-Race Circuits), Waveguide Corners, Bends and Twists, Directional Couplers, Two-Hole Directional Couplers, Z & ABCD Parameters- Introduction to S parameters, S Matrix of a Directional Coupler, Hybrid Couplers, Circulators and Isolators, Microwave Circulators, Microwave Isolators.
Objective: To study passive microwave components and their S- Parameters
Session No. / Topics to be covered / Time / Ref / P.No / Teaching Method1. / Microwave Frequencies, Microwave Devices, Microwave Systems, Microwave Units of Measure / 50m / 1,3 / 1-5,1-3 / BB
2. / Microwave Hybrid Circuits, Waveguide Tees
(E plane tee, H plane tee) / 50m / 1,2,5 / 141-146,
175-178,
354-358 / BB
3. / Magic Tees (Hybrid Trees), Hybrid Rings (Rat-Race Circuits) / 50m / 1,2,3,4,5 / 146-148,
178-183,
435-441,
402-407,
358-360 / BB
4. / Waveguide Corners, Bends and Twists / 50m / 1,2 / 148-149,
166-167 / BB
5. / Directional Couplers, Two-Hole Directional Couplers / 50m / 1,2,5 / 149-151,
190-194,
367-369 / BB
6. / Z & ABCD Parameters- Introduction to S parameters / 50m / 2,4,5 / 151-152,
196-206,
154-157 / BB
7. / S Matrix of a Directional Coupler / 50m / 1 / 151-154 / BB
8. / Hybrid Couplers / 50m / 1 / 154-156 / BB
9. / Microwave Circulators, Microwave Isolators,
Problems / 50m / 1,2 / 156-161,
183-188 / BB
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Date: 22//06//2010
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Sub Code & Name: EC1403 -MICROWAVE ENGINEERING
Unit : II Branch : EC Semester :VIIUNIT II TRANSFERRED ELECTRON DEVICES (TEDs) and AVALANCHE TRANSIT-TIME DEVICES 9
Session No. / Topics to be covered / Time / Ref / P.No / Teaching Method10. / Transit time limitations in transistors, Microwave bipolar transistors(Physical structure,Configuration,Principles of operation) power frequency limitations / 50m / 1,2,4 / 166-185,
404-408,
604-605 / BB
11. / Microwave field effect transistors(Physical structure,Principles of operation), High electron mobility transistor (HEMT)(Physical structure,operation,applications) / 50m / 1,2,4 / 209-214-230-235,
409-411,
601-603 / BB
12. / Gunn-Effect Diodes - GaAs Diode, Background, Gunn Effect, Ridely-Watkins-Hilsun (RWH) Theory, Differential Negative Resistance / 50m / 1,2 / 269-274,
378-380 / BB
13. / Two-Valley Model Theory, High-Field Domain / 50m / 1 / 274-284 / BB
14. / Modes of Operation(criteria,Gunn oscillation modes, Limited space charge accumulation mode) / 50m / 1,2 / 284-290,
380-382 / BB
15. / LSA Diodes, InP Diodes, CdTe Diodes, / 50m / 1 / 291-296 / BB
16. / Microwave Generation, Microwave Amplification / 50m / 1 / 296-299 / BB
17. / Avalanche transit-time devices -Read Diode, Physical Description, Avalanche Multiplication, Carrier Current Io(t) and External Current Ie(t) / 50m / 1,2 / 303-308,
383-384 / BB
18. / Output Power and Quality Factor, IMPATT Diodes, Physical Structures, Negative Resistance, Power Output and Efficiency / 50m / 1,2,4 / 308-313,
384-388,
589-591 / BB
19. / TRAPATT Diodes, Physical Structures, Principles of Operation, Power Output and Efficiency / 50m / 1,2 / 314-317,
390-391 / BB
20. / BARITT Diodes, Physical Description, Principles of Operation, Microwave Performance / 50m / 1,2 / 317-320,
391-392 / BB
21. / Parametric Devices, Physical Structures, Nonlinear
Reactance(Small signal method) / 50m / 1,2 / 320-323,
397-498 / BB
22. / Cont. (Large signal method),Manley rowe power
Relations,Parametric Amplifiers(Parametric up &
down converter), Applications. / 50m / 1,2 / 323-330,
398-403 / BB
23. / CAT-I / 75m / - / - / - / -
Transit time limitations in transistors, Microwave bipolar transistors, power frequency limitations, Microwave field effect transistors, HEMT,Introduction, Gunn-Effect Diodes - GaAs Diode, Background, Gunn Effect, Ridely-Watkins-Hilsun (RWH) Theory, Differential Negative Resistance, Two-Valley Model Theory, High-Field Domain, Modes of Operation, LSA Diodes, InP Diodes, CdTe Diodes, Microwave Generation and Amplification, Microwave Generation, Microwave Amplification, AVALANCHE TRANSIT-TIME DEVICES, Introduction, Read Diode, Physical Description, Avalanche Multiplication, Carrier Current Io(t) and External Current Ie(t), Output Power and Quality Factor, IMPATT Diodes, Physical Structures, Negative Resistance, Power Output and Efficiency, TRAPATT Diodes, Physical Structures, Principles of Operation, Power Output and Efficiency, BARITT Diodes, Physical Description, Principles of Operation, Microwave Performance, Parametric Devices, Physical Structures, Nonlinear Reactance and Manley - Rowe Power Relations, Parametric Amplifiers, Applications
Objective: To study Microwave semiconductor devices & applications.
DOC/LP/01/28.02.02
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Date: 22//06//2010
Page 03 of 06
Sub Code & Name: EC1403 - MICROWAVE ENGINEERING
Unit : III Branch : EC Semester :VIIUnit III MICROWAVE LINEAR-BEAM TUBES (O TYPE) and MICROWAVE CROSSED FIELD TUBES (M TYPE) 9
Klystrons, Reentrant Cavities, Velocity-Modulation Process, Bunching Process, Output Power and Beam Loading, State of the Art, Multicavity Klystron Amplifiers, Beam-Current Density, Output Current Output Power of Two-Cavity Klystron, Output Power of Four-Cavity Klystron, Reflex Klystrons, Velocity Modulation, Power Output and Efficiency, Electronic Admittance, Helix Traveling-Wave Tubes (TWTs), Slow-Wave structures, Amplification Process, Convection Current, Axial Electric Field, Wave Modes, Gain Consideration, MICROWAVE CROSSED-FIELD TUBES , Magnetron Oscillators, Cylindrical Magnetron, Coaxial Magnetron, Tunable Magnetron, Ricke diagram.
.
Objective: To study Microwave sources and amplifiers
Session No. / Topics to be covered / Time / Ref / P.No / Teaching Method24. / Klystrons, Reentrant Cavities, Velocity-Modulation Process / 50m / 1,2 / 341-347,
322-324 / BB
25. / Bunching Process, Output Power and Beam Loading(Efficiency) / 50m / 1,2 / 348-354,
324-328 / BB
26. / Cont. Power, State of the Art(Extended interaction, High efficiency and power) / 50m / 1 / 355-362 / BB
27. / Multi-cavity Klystron Amplifiers, Beam-Current Density / 50m / 1,2 / 362-368,
345 / BB
28. / Output Current Output Power of Two-Cavity Klystron, Four-Cavity Klystron / 50m / 1,2 / 369-373,
334-340 / BB
29. / Reflex Klystrons, Velocity Modulation, Power Output and Efficiency / 50m / 1,2 / 373-378,
332-334 / BB
30. / Electronic Admittance, Helix Traveling-Wave Tubes (TWTs) / 50m / 1,2 / 379-383,
346-350 / BB
31. / Slow-Wave structures, Amplification Process / 50m / 1 / 384-390 / BB
32. / Convection Current, Axial Electric Field, Wave Modes, Gain Consideration / 50m / 1 / 391-397 / BB
33. / Microwave crossed-field tubes , Magnetron Oscillators, Cylindrical Magnetron(Angular frequency,Output power and efficiency) / 50m / 1,2 / 425-429,
351-358 / BB
34. / Coaxial Magnetron, Tunable Magnetron, Ricke diagram, Problems / 50m / 1 / 442-447 / BB
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Date: 22//06//2010
Page 04 of 06
Sub Code & Name: EC1403 -MICROWAVE ENGINEERING
Unit : IV Branch : EC Semester :VIIUNIT IV STRIP LINES and MONOLITHIC MICROWAVE INTEGRATED CIRCUITS 9
Introduction, Microstrip Lines, Characteristic Impedance of Microstrip Lines, Losses in Microstrip Lines, Quality Factor Q of Microstrip Lines, Parallel Strip Lines, Distributed Lines, Characteristic Impedance, Attenuation Losses, Coplanar Strip Lines, Shielded Strip Lines, References, Problems, MONOLITHIC MICROWAVE INTEGRATED CIRCUITS, Introduction, Materials, Substrate Materials, Conductor Materials, Dielectric Materials, Resistive Materials, Monolithic Microwave Integrated-Circuit Growth, MMIC Fabrication Techniques, Fabrication Example.
Objective: To study microwave integrated ciruits
Session No. / Topics to be covered / Time / Ref / P.No / Teaching Method35. / Microstrip Lines- Introduction, Characteristic Impedance / 50m / 1,3 / 472-477,
130-136 / BB
36. / Losses(Dielectric, Ohmic ,Radiation losses) / 50m / 1 / 477-484 / BB
37. / Quality Factor Q of Microstrip Lines, Parallel Strip Lines / 50m / 1 / 484-486 / BB
38. / Distributed Lines, Characteristic Impedance, Attenuation Losses / 50m / 1,3 / 486-488,
153-157 / BB
39. / Coplanar Strip Lines, Shielded Strip Lines, Monolithic microwave integrated circuits, / 50m / 1,3,4 / 488-481-495-497,
175-178,
584-588 / BB
40. / Materials, Substrate Materials, Conductor Materials / 50m / 1 / 497-500 / BB
41. / Dielectric Materials, Resistive Materials, Monolithic Microwave Integrated-Circuit Growth / 50m / 1 / 500-502 / BB
42. / Monolithic Microwave Integrated circuits Fabrication Techniques / 50m / 1 / 502-503 / BB
43. / Cont. Epitaxial growth,lithography, Fabrication Example / 50m / 1 / 503-504 / BB
44. / CAT-II / 75m / - / -
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Date: 22//06//2010
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Sub Code & Name: EC1403 -MICROWAVE ENGINEERING
Unit : V Branch : EC Semester :VIIUNIT V MICROWAVE MEASUREMENTS: 9
Slotted line VSWR measurement, VSWR through return loss measurements, power measurement, impedance measurement insertion loss and attenuation measurements- measurement of scattering parameters - Measurement of 1 dB, dielectric constant measurement of a solid using waveguide
Objective: To study microwave measurements.
Session No. / Topics to be covered / Time / Ref / P.No / Teaching Method45. / Slotted line VSWR measurement
VSWR through return loss measurements / 50m / 2 / 466-471 / BB
46. / Power measurement (Schottky Barrier Diode sensor,Bolometer sensor,Power meter) / 50m / 2 / 459-462 / BB
47. / Cont. Thermocouple sensor,Calorimetric method, Impedance measurement(Slotted line method) / 50m / 2 / 463-464-473-474 / BB
48. / Cont. Reactive discontinuity method,Reflectometer method / 50m / 2 / 474-478 / BB
49. / Insertion loss measurements / 50m / 2 / 464 / BB
50. / Atteuation measuremet / 50m / 2 / 465-466 / BB
51. / Measurement of scattering parameters / 50m / 2 / 497-501 / BB
52. / Measurement of dielectric constant (Waveguide method,Cavity perturbation method) / 50m / 2 / 491-494 / BB
53. / Measurement of a solid using waveguide / 50m / 2 / 495-497 / BB
54. / CAT-III / 75m
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Date: 22//06//2010
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Sub Code & Name: EC1403 - MICROWAVE ENGINEERING
Branch : EC Semester :VIICourse Delivery Plan:
Week / 1 / 2 / 3 / 4 / 5 / 6 / 7 / 8 / 9 / 10 / 11 / 12 / 13 / 14I II / I II / I II / I II / I II / I II / I II / I II / I II / I II / I II / I II / I II / I
Units / / / /
1 / 2 / 3 / 4 / 5
CAT-I CAT-II CAT-III
TEXT BOOKS
1. Samuel Y.LIAO : Microwave Devices and Circuits - Prentice Hall of India - 3rd Edition (2003)
2. Annapurna Das and Sisir K.Das: Microwave Engineering - Tata McGraw-Hill (2000) (UNIT V)
References
3. R.E. Collin : Foundations for Microwave Engg. - IEEE Press Second Edition (2002)
4. David M.POZAR : Microwave Engg. - John Wiley & Sons - 2nd Edition (2003)
5. P.A.RIZZI - Microwave Engg. (Passive ckts) - PH1
Prepared by / Approved bySignature
Name / Dr M J S Rangachar /Ms.S.Reethi / Prof.E.G.Govindan
Designation / Professor / Lecturer / HOD-EC
Date / 29.06.2010 / 29.06.2010