Journal Papers:

1. Chun-Yuan Huang, Meng-Chyi Wu*,Jeng-Jung Shen, and Shih-Yen Lin, “Self-ordered InGaAs Quantum Dots Grown at Low Growth Rates”, J. Appl. Phys. vol. 103, no. 4, pp. 044301, Feb. 2008 (SCI, IF:, NSC 95-2215-E-007-003.).

2. Chi-Che Tseng, Shu-Ting Chou, Yi-Hao Chen, Tung-Hsun Chung, Shih-Yen Lin* and Meng-Chyi Wu,”Influence of As-stabilized surface on the formation of InAs/GaAsquantum dots”, J. Vacuum Sci. Tech. B, vol. 26, no. 3, pp. 956-958, May/June 2008 (SCI, IF: 1.419, NSC 96-2221-E-001-030).

3. Shu-Ting Chou, Chi-Che Tseng, Cheng-Nan Chen, Wei-Hsiun Lin, Shih-Yen Lin*, and Meng-Chyi Wu, “Quantum-Dot/Quantum-Well Mixed-Mode Infrared Photodetectors for Multi-Color Detection”, Appl. Phys. Lett., vol. 92, no. 25, pp. 253510, June 2008 (The paper is also selected in the Virtual Journal of Nanoscale Science & Technology, Volume 18, Issue 2 (2008)) (SCI, IF: 3.596, NSC 96-2221-E-001-030).

4. C. L. Tsai, K. Y. Cheng*, S. T. Chou,S. Y. Lin, C. Xu and K. C. Hsieh, “Tailoring detection wavelength of InGaAs quantum wire infraredphotodetector”, J. Vacuum Sci. Tech. B, vol. 26, no. 3, pp. 1140-1144, May/June 2008 (The paper is also selected in the Virtual Journal of Nanoscale Science & Technology, Volume 17, Issue 23 (2008)) (SCI, IF: 1.419).

5. Chi-Che Tseng, Shu-Ting Chou, Yi-Hao Chen, Cheng-Nan Chen, Wei-Hsun Lin, Tung-Hsun Chung, Shih-Yen Lin*, Pei-Chin Chiu, Jen-Inn Chyi and Meng-Chyi Wu, “Enhanced Normal-Incident Absorption of Quantum-Dot Infrared Photodetectors with Smaller Quantum Dots”, IEEE Photonics Technology Lett., vol. 20, no. 14, pp. 1240-1242, July 2008 (SCI, EI, IF: 2.015, NSC 96-2221-E-001-030)

6. Shu-Ting Chou, Shih-Yen Lin*, Cheng-Nan Chen, Chi-Che Tseng, Yi-Hao Chen, and Meng-Chyi Wu, “Single-Period InAs/GaAs Quantum-Dot Infrared Photodetectors”, IEEE Photonics Technology Lett., vol. 20, no. 18, pp. 1575-1577, Sep. 2008 (SCI, EI, IF: 2.015, NSC 96-2221-E-001-030).

7. Chi-Che Tseng, Shu-Ting Chou, Shih-Yen Lin*,Cheng-Nan Chen,Wei-Hsun Lin,Yi-Hao Chen,Tung-Hsun Chung, and Meng-Chyi Wu, “The Transition Mechanisms of a ten-Period InAs/GaAs Quantum-Dot Infrared Photodetector”, J. Vacuum Sci. Tech. B, vol. 26, no. 6, pp. 1831-1833, Nov/Dec 2008 (SCI, IF: 1.419, NSC 96-2228-E-002-012).

8. S. T. Chou, S. Y. Lin*, Bonnie Yu, J. J. Shyue, C. C. Tseng, C. N. Chen, M. C. Wu and W. Lin, “The Influence of Interface Roughness on the Normal Incident Absorption of Quantum-Well Infrared Photodetectors”, Thin Solid Films, vol. 517, no. 5, pp. 1799–1802, Jan. 2009 (SCI, IF: 1.693, SBIR project with Grant # 1C950022).

9. Yung-Sheng Wang, Shoou-Jinn Chang, Shu-Ting Chou and Shih-Yen Lin* and Wei Lin, “High Responsivity InGaAs/InP Quantum-Well Infrared Photodetectors Prepared by Metal Organic Chemical Vapor Deposition”, Jpn. J. Appl. Phys. vol. 48, no. 4, pp. 04C108, May 2009 (SCI, IF:, SBIR project with Grant # 1C950022).

10. Shih-Yen Lin*, Shu-Ting Chou, Wei-Hsun Lin, “The Transition Mechanisms of Quantum-Dot/Quantum-Well Mixed-Mode Infrared Photodetectors”, Infrared Physics & Technology, in press (SCI, IF:, NSC 96-2221-E-001-030 and NSC 96-2218-E-002-012).

11. Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, Shu-Chen Mai, Shih-Yen Lin*,and Meng-Chyi Wu, “InGaAs-Capped InAs/GaAs Quantum-Dot Infrared Photodetectors Operating in the Long-WavelengthInfraredRange”, IEEE Photonics Technology Lett. accepted for publication (SCI, IF:, NSC 96-2221-E-001-030 and NSC 96-2218-E-002-012).

12. Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, Shih-Yen Lin*, and Meng-Chyi Wu, “Enhancement of Operation Temperature of InAs/GaAs Quantum-Dot Infrared Photodetectors with Hydrogen-Plasma Treatment”, J. Vacuum Sci. Tech. B accepted for publication (SCI, IF:, NSC 96-2221-E-001-030 and NSC 96-2218-E-002-012).

13. Shih-Yen Lin*, Wei-Hsun Lin, Chi-Che Tseng,Kuang-Ping Chao, and Shu-Cheng Mai, “Voltage-Tunable Two-Color Quantum-Dot Infrared Photodetectors”, Appl. Phys. Lett. under revision (SCI, IF:, NSC 98-2221-E-001-001).

14. Wei-Hsun Lin,Kuang-Ping Chao, Chi-Che Tseng, Shu-Chen Mai, Shih-Yen Lin* and Meng-Chyi Wu, “The influence of In composition on InGaAs-capped InAs/GaAs quantum-dot infrared photodetectors”, J. Appl. Phys. under revision (SCI, IF:, NSC 98-2221-E-001-001).

15. Shih-Yen Lin*, Chi-Che Tseng, Tung-Hsun Chung, Wen-Hsuan Liao, Shu-Han Chen, and Jen-Inn Chyi, “Site-Controlled Self-Assembled InAs Quantum Dots Grown on GaAs Substrates”, submitted to Appl. Phys. Lett. (SCI, IF:, NSC 98-2221-E-001-001).

16. Chi-Che Tseng, Tung-Hsun Chung, Shu-Cheng Mai, Kuang-Ping Chao, Wei-Hsun Lin, Shih-Yen Lin* and Meng-Chyi Wu, “The transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coverages”, submitted to J. Vacuum Sci. Tech. B (SCI, IF:, NSC 98-2221-E-001-001).

17. Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, Shu-Chen Mai, Shih-Yen Lin*, and Meng-Chyi Wu, “InGaAs-Capped InAs/GaAs Quantum-Dot Infrared Photodetectors with 10.4 m Responses”, submitted to J. Vacuum Sci. Tech. B (SCI, IF:, NSC 98-2221-E-001-001).

Conference Papers:

1. Shu-Ting Chou, Yu-Lin Chang, Yuan-Ting Lin, Yuh-Jen Cheng, Shih-Yen Lin and Li-Wei Tu, “The Surface Polarities of GaN Films Grown on Different Buffer Layers by Plasma-Assisted Molecular Beam Epitaxy”, MBE Taiwan 2008, Hsinchu, Taiwan.

2. Shu-Ting Chou, Chi-Che Tseng, Cheng-Nan Chen, Wei-Hsun Lin, Shih-Yen Lin and Meng-Chyi Wu, “Quantum-Well/Quantum-Dot Mixed-Mode Infrared Photodetectors Prepapred by Molecular Beam Epitaxy”, MBE Taiwan 2008, Hsinchu, Taiwan.

3. Chi-Che Tseng, Shu-Ting Chou, Shih-Yen Lin, Yi-Hao Chen, Tung-Hsun Chung and Meng-Chyi Wu, “The Electronic Structures of InAs/GaAs Quantum Dots with Different Heights Determined by Photoluminescence Excitation”, MBE Taiwan 2008, Hsinchu, Taiwan.

4. Shu-Ting Chou, Chi-Che Tseng, Cheng-Nan Chen, Wei-Hsiun Lin, Shih-Yen Lin, and Meng-Chyi Wu, “Quantum-Dot/Quantum-Well Mixed-Mode Infrared Photodetectors for Multi-Color Detection”, MBE 2008, Vancouver, Canada.

5. Chi-Che Tseng, Shu-Ting Chou, Shih-Yen Lin, Yia-Chung Chang, Yi-Hao Chen, Tung-Hsun Chung, and Meng-Chyi Wu, “Experimentally Determined Electronic Structures of InAs/GaAs Quantum Dots with Different Dot Heights by Using Photoluminescence Excitation Measurements”, MBE 2008, Vancouver, Canada.

6. Y. T. Lin, Z. L. Lee, K. L. Wu, C. Y. Ho, Y. L. Chang, Z. H. Gong, P. H. Tseng, M. C. Chou, D. J. Jang, S. T. Chou, S. Y. Lin, Li-Wei Tu, “Investigations of Non-Polar M-Plane GaN and InN Grown on LiAlO2(100)”, IWN2008, Montreux, Switzerland.

7. Wei-Hsun Lin, Shu-Ting Chou, Chi-Che Tseng, Meng-Yu Lin, Kuang-Ping Chao, Shih-Yen Lin, Meng-Chyi Wu, “The Temperature Dependence of Responsivities for Quantum-Well/Quantum-Dot Mixed-Mode Infrared Photodetectors”, OPT2008, Taipei, Taiwan.

8. Wei-Hsun Lin, Shu-Ting Chou, Chi-Che Tseng, Meng-Yu Lin, Kuang-Ping Chao, Shih-Yen Lin, Meng-Chyi Wu, “The Temperature-Dependent Responsivities of Quantum-Dot Infrared Photodetecors”, OPT2008, Taipei, Taiwan.

9. Tung-Hsun Chung, Chi-Che Tseng, Shu-Chen. Mai,Shih-Yen Lin, Meng-Chyi Wu, “The Influence of Antimony on The Optical Characteristics and Surface Morphologies of InAs Quantum Dots”, OPT2008, Taipei, Taiwan.

10. Chi-Che Tseng, Tung-Hsun Chung, Shu-Chen. Mai, Shih-Yen Lin, Meng-Chyi Wu, “The Influence of Strain Accumulation on the Photoluminescence Excitation Spectra of InAs/GaAs Quantum Dots with Different InAs Coverage”, OPT2008, Taipei, Taiwan.

11. Shu-Ting Chou, Shih-Hao Tsai, Yun-Wei Chen, Bonnie Yu, Shih-Hsin Hsu, Jing-Jong Shyue, Shih-Yen Lin, Meng-Chyi Wu, “Transport Properties of Pentacene Field Effect Transistors with Si Nano-particles Modified Channels” , OPT2008, Taipei, Taiwan.

12. Shih-Yen Lin, Shu-Ting Chou and Wei-Hsun Lin, “Quantum-Dot/Quantum-Well Mixed-Mode Infrared Photodetectors”, QSIP2009, Yosemite, USA.

13. Chi-Che Tseng, Tung-Hsun Chung, Shu-Cheng Mai, Kuang-Ping Chao, Wei-Hsun Lin, Shih-Yen Lin and Meng-Chyi Wu, “The Ttransition Mechanisms of InAs/GaAs quantum-dot Infrared Photodetectors with Different inAs Coverage”, NAMBE 2009, USA.

14. Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, Shu-Chen Mai and Shih-Yen Lin, “InGaAs-Capped InAs/GaAs quantum-Dot Infrared Photodetectors with 10.4 m Responses”, NAMBE 2009, USA.