N-06-MEPHI-4
Passport of joint Russian-U.S. project
1. The title
Nanomaterials and nanotechnologies for the nanotransistors and monolithic integral circuits of Ultra High Frequency
2. Abstract
The physics and technology of nanoheterostructures of A3B5 semiconductors concerning designing in electronics and optoelectronics areas are the most intensively developing technologiesin the Russian Federation. The nanoheterostructures technology is one of the most highly intellectual worldwide and provides creating a wide nomenclature for the military and civil applications. Inspite of the high scientific potential in the Russian Federation, MESFET and P-HEMT based on GaAs are the dominant technologies, despite its restriction. Such technologies allow creating devices for the electronics with frequencies only till 20-40 GHz.
Nowadays the devices and integral circuits based on nanoheterostructures of different types are well produced and employed abroad, first of all in the United States of America, Japan, EU and Taiwan. At the same time in the Russian Federation developments and, in particular, practical utilizing of these prospective devices are on the low level.
We can sort out several main reasons:
-the considerable lag in equipping with modern technological equipment of the domestic researching centers and enterprises of the electron industry and developing devices with topological norms less than 0.2 mkm;
-serious problems in basic materials providing (high-quality wafers with 52, 76 and 100 mm diameters with low dislocations density and high characteristic’s homogeneity, ultrapure materials for the molecular beam epitaxy, etc.);
-the lag in the developments in some key trends feeded with using multilayered semiconductor nanoheterostructures with the high layer and heterointerface quality (heterostructural field and heterobipolar transistors of mm range, high-perfomance vertical-radiated lasers and local satellite systems, basic technologies of creating high-perfomance LED, etc.).
Today the area of frequencies higher than 40 GHz isn’t provided of domestic element base of the solid-state electronics. Furthermore, the full cycle of technological manufacture of nanoheterostructures and the functional devices does not exist to solve the given problem. Transiting in the given frequency area is impossible with ordinary scaling of topological norm (length) gate.
The materials system of nanoheterostructure on which the transistor and the integral circuit are based should be altered. Such approach is the transition on the system of ternary compounds InAlAs/InGaAs on InP wafers. Also in the process of the increasing of the transistor’s frequency it is necessary to change the thickness and the design of the multilayered nanoheterostructure. Utilizing the resonance -tunneling nanoheterostructures based on mentioned heterosystem allow mastering terahertz range of the frequencies.
The application of nanoheterostructures is based on their unique property included the quantum principles,the intellectual design of layers and high-preciously technologies. Therefore, such aims have simultaneously high fundamental and applied character.
3. Description of the expected project results
The complex elaboration of the epitaxy technology is going to be done.What's more,to create a new generation of ultra high frequency nanotransistors and monolithic integral circuits with the gate length up to 100 nmon the frequency range 40-500 GHz,is to be done as well.To provide effects and results of the elaboration the analysis of frequency, noise and staticparameters is included in the optimized cycle based on the cultivated nanoheterostrucutres.
4. Novelty, description of competitive advantages of the developed technology
The technology of growing high-preciously multilayered nanoheterostructures InAlAs/InGaAs/InAlAs/InP by means of molecular beam epitaxy on InP wafers with 50 and 76 mm diameters.
The design of nanoheterostructures InAlAs/InGaAs/InAlAs/InP for ultrahigh low-noise nanotransistors with high electron mobility with frequency up to 500 GHz.
Molecular beam epitaxy (MBE) technology of the high-preciously multilayered pseudomorphic AlGaAs/InGaAs/AlGaAs and metamorphic nanoheterostructures AlInAs/InGaAs/AlInAs/GaAs on GaAs.
MBE technology of nanoheterostructures for resonance-tunneling diodes and planar-doped barrier structures.
Electron-beam nanolithography technology for nanotransistors with minimum gate length Lg up to 50-100 nm with bound frequencies ft and fmax up to 500 GHz.
5. Expected effect of the project results
Economic benefit is expected in branch of researches of new materials and electronics devices. The world market of technics using similar devices makes not less than 40 billion dollars. By our estimation, the general capacity of the domestic market of the specified products now makes not less than 5 billion rbl., and the market grows with dynamics from 30 % in 2010 to 50 % in 2013 that is caused, first of all, by scientific and technical progress.
6. Proposed participants of the project consortium (research, education, commercial)
Development, measurements, tests of the new devices and materials:
National Research Nuclear University MEPhI, Moscow, Russia
University of California Santa Barbaba (UCSB), USA
University of CaliforniaLos Angeles (UCLA), USA
Commercialization of works:
Joint Stock Company «OKB - Planeta»,Velikiy Novgorod, Russia
Contact information:
MEPhI – Petrov Roman –
JSC «OKB - Planeta» - Ionov Aleksandr -
7. Preliminary plan of project preparation and performance, main project milestones
Time of receiving of preliminary results of researches – one year
Time of receiving of preliminary results of workings out – one year
Time of receiving of final results of workings out – one year
Commercialization results – one and a half year
Periodicity of coordination of actions of the joint project – time in half a year.