Integra Announcesdevelopment of Gan Technology

FOR RELEASE MAY 25, 2010

Integra announcesdevelopment of GaN technology

Integra samples world’s first GaN-on-silicon device operating at 50 volts.

ANAHEIM, California (USA) – May 25, 2010 – Integra Technologies, Inc. (ITI), a leading manufacturer of high power pulsedRF transistors, today announced the development of High Voltage Gallium Nitride on Silicon technology. Leveraging a world class design team and internal wafer fabrication facility with nearly two years of research and development has culminated in the announcement and launch of two new products the IGN2731M25 and IGN2731M50.Integra has developed the first high voltage GaN-on-silicon HEMT process with drain-source breakdowns exceeding 200 volts. The high breakdown voltage enables the devices to operate at higher voltages than seen in today’s marketplace which translates into higher performance.

The GaN technology development effort is a direct result of customer requests for smaller, more efficient power devices with broadband performance.

“This just demonstrates Integra management’s commitment to providing superior technology and world class devices to our customers. Integra is excited by this new technology that allows us to penetrate new markets involving CW applications such as Electronics Warfare (EW) for the defense industry.” says John Titizian, Integra’s founder and president, describing the development effort. “We have years of RF expertise manufacturing high power semiconductors and with our low overhead cost structure we will continue to dominate in both price and performance.”

“Integra further solidifies its leadership position in high power pulsed RF transistors in the S-band radar market with these two new products.” says Jeff Burger, VP of Engineering and original founding member. “We continue to provide superior technology and excellent support to customers in our target market.”

About the IGN2731M25

The PN IGN2735M25 operates over the instantaneous bandwidth covering 2.7 GHz to 3.1 GHz in the S-band frequency range. Under 300µs pulse width and 10% duty cycle pulsing conditions it typically supplies a minimum of 25 watts of peak output power. With breakdown voltages approaching 200V the device is characterized at 50V operating voltage providing over 13 dB of gain and 50 % efficiency. The single ended device is housed in a ceramic flanged package providing excellent thermal advantages.

About the IGN2731M50

The PN IGN2731M50operates over the instantaneous bandwidth covering 2.7 GHz to 3.1 GHz in the S-band frequency range. Under 300µs pulse width and 10% duty cycle pulsing conditions it typically supplies a minimum of 50 watts of peak output power. With breakdown voltages approaching 200V the device is characterized at 50V operating voltage providing over 12 dB of gain and 50 % efficiency. The single ended device is housed in a ceramic flanged package providing excellent thermal advantages.

Samples and Availability

The IGN2731M25 and IGN2731M50 are available immediately for sampling. For pricing and delivery please email

About Integra Technologies

Integra is the premier supplier of high power pulsed transistors to the aviation industry, with an enviable portfolio covering radar bands in the UHF/VHF, L-band, S-band and C-band for commercial, military and defense markets. Integra services these markets with a variety of semiconductor technologies including VDMOS, LDMOS, bipolar and GaN-on-Si all produced in a domestic all-gold 6” wafer fab. Privately owned and operated with zero debt, Integra employs nearly 100 people at its worldwide headquarters located in El Segundo, CA.

Integra Technologies was founded in 1997 with record setting S-band pulsed performance with patented high frequency bipolar technology. These transistors are still in production today with a long history of in the field reliable performance. Integra’s patented technology starts with an all-gold metallization process for all elements of the die fabrication process to ensure the highest reliability in the industry. With a team of highly knowledgeable RF designers ready to offer application support, we offer both discrete devices and integrated pallets for a commanding presence in the S-band radar marketplace.

More information on Integra can be found at

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SOURCE: Integra Technologies, Inc., 321 Coral Circle, El Segundo, CA90245

The Integra name and logo are registered trademarks of Integra Technologies, Inc. in the USA. All other trademarks mentioned herein are the property of their respective companies.