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Background Statement for SEMI Draft Document 6160
Reapproval ofSEMI G60-94 (Reapproved 0811): TEST METHOD FOR THE MEASUREMENT OF ELECTROSTATIC PROPERTIES OF SEMICONDUCTOR LEADFRAME INTERLEAFING MATERIALS
NOTICE: This Background Statement is not part of the balloted item. It is provided solely to assist the recipient in reaching an informed decision based on the rationale of the activity that preceded the creation of this ballot.
NOTICE: For each Reject Vote, the Voter shall provide text or other supportive material indicating the reason(s) for disapproval (i.e., Negative[s]), referenced to the applicable section(s) and/or paragraph(s), to accompany the vote.
NOTICE: Recipients of this ballot are invited to submit, with their Comments, notification of any relevant patented technology or copyrighted items of which they are aware and to provide supporting documentation. In this context, ‘patented technology’ is defined as technology for which a patent has been issued or has been applied for. In the latter case, only publicly available information on the contents of the patent application is to be provided.
Background
SEMI G60-94 (Reapproved 0811) is due for 5 Year Review, being proposed for reapproval because they are currently used widely. This process is required by the SEMI Regulations to ensure that this standard is still valid.
The ballot results will be reviewed and adjudicated at the meetings indicated in the table below. Check Standards Calendar for the latest update.
Review and Adjudication Information
Task Force Review / Committee AdjudicationGroup: / 5 Year Review TF / Assembly & Packaging JapanTC Chapter
Date: / TBD / Monday, July 24, 2017
Time & Time zone: / TBD / 14:00–17:00 [JST]
Location: / TBD / SEMI Japan office
City, State/Country: / TBD / Tokyo, Japan
Leader(s): / Kazunori Kato (AiT)
Masahiro Tsuriya (iNEMI) / Kazunori Kato (AiT)
Masahiro Tsuriya (iNEMI)
Standards Staff: / Chie Yanagisawa (SEMI Japan)
81.3.3222.5863 / / Chie Yanagisawa (SEMI Japan)
81.3.3222.5863 /
Thistask force meeting’s details are subject to change, and additional review sessions may be scheduled if necessary. Contact the task force leaders or Standards staff for confirmation.
Telephone and web information will be distributed to interested parties as the meeting date approaches. If you will not be able to attend these meetings in person but would like to participate by telephone/web, please contact Standards staff.
SEMI Draft Document 6160
Reapproval ofSEMI G60-94 (Reapproved 0811): TEST METHOD FOR THE MEASUREMENT OF ELECTROSTATIC PROPERTIES OF SEMICONDUCTOR LEADFRAME INTERLEAFING MATERIALS
According to the SEMI StandardsProcedure Manual, a reapproval Letter Ballot should include the Purpose, Scope, Limitations, and Terminology sections, along with the full text of any paragraph in which editorial updates are being made.
Voter requests for access to the full Standard or Safety Guideline must be made at least three business days before the voting deadline. Late requests may not be honored.
1 Purpose
1.1 This Test Method describes a procedure to determine the electrostatic properties of interleaf materials in film or sheet form by measuring the magnitude and polarity of an induced charge and the time required for complete dissipation of the charge.
NOTE 1:This Test Method is independent of volume or insulation resistivities.
2 Scope
2.1 This Test Method is suitable for all interleaf materials and may be used by vendors at outgoing inspection, or customers at incoming inspection.
NOTICE:SEMI Standards and Safety Guidelines do not purport to address all safety issues associated with their use. It is the responsibility of the users of the Documents to establish appropriate safety and health practices, and determine the applicability of regulatory or other limitations prior to use.
3 Referenced Standards and Documents
3.1 None.
4 Terminology
4.1 Definitions
4.1.1 electrostatic properties — for the purposes of this Document, electrostatic properties are defined as the ability of a material, when grounded, to dissipate a charge induced onto the surface of that material.
4.1.2 interleaf (for semiconductor leadframes) — a paper or plastic film placed between layers of semiconductor leadframe strips to prevent transformation.
NOTICE:SEMI makes no warranties or representations as to the suitability of the Standards and Safety Guidelines set forth herein for any particular application. The determination of the suitability of the Standard or Safety Guideline is solely the responsibility of the user. Users are cautioned to refer to manufacturer’s instructions, product labels, product data sheets, and other relevant literature, respecting any materials or equipment mentioned herein. Standards and Safety Guidelines are subject to change without notice.
By publication of this Standard or Safety Guideline, SEMI takes no position respecting the validity of any patent rights or copyrights asserted in connection with any items mentioned in this Standard or Safety Guideline. Users of this Standard or Safety Guideline are expressly advised that determination of any such patent rights or copyrights and the risk of infringement of such rights are entirely their own responsibility.
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline. Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development) activity. All other reproduction and/or distribution without the prior written consent of SEMI is prohibited.
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