SPCC 2016 Agenda
DAY 1 — Tuesday April 19, 2016
7:30 AM – 9:00 AM Breakfast Location: Monterey & Carmel rooms
Session 1: Emerging Technologies for 10 and 7 nm
Location: Saratoga Ballroom
Session Chairs: Joel Barnett, Jin-Goo Park, Akshey Seghal
9:00 AM: Introductions, Day 1 Welcome, Conference Overview — Joel Barnett/Mark Thirsk
9:15 AM: KEYNOTE: Emerging Interconnect Technologies for Nanoelectronics — Prof. Krishna Saraswat, Stanford
9:55 AM: Characterization of effective removal of surface contaminants on epitaxial surfaces for silicide contacts — Brown Peethala, IBM
10:15 AM: Tungsten Post-CMP Cleaning Formulations for Advanced Nodes: 10 nm and 7 nm — Daniela White, Entegris
10:35 AM - 11:05 AM BREAK Location: Monterey & Carmel rooms
11:05 AM: INVITED: 3D architecture and interconnect for emerging memory technologies — Er-Xuan Ping, AMAT
11:40 AM: Surface preparation and cleaning for Cobalt interconnects in 7nm and beyond technologies — Brown Peethala, IBM
12:00 PM: Advanced Metal Nitride Select Etch for 7nm FEOL and BEOL Applications — Sherman Hsu, Avantor Materials
12:20 PM: Selective Removal of TiN Metal Hard-Mask at Metal 1 for 48 nm Pitch Structures — Shariq Siddiqui, GLOBALFOUNDRIES
12:40 PM – 2:05 PM LUNCH Location: Monterey & Carmel Rooms
DAY 1 — Tuesday, April 19, 2016 cont’d
Session 2: Contamination Control Location: Saratoga Ballroom
Session Chairs: Jagdish Prasad, Chris Sparks
2:05 PM: INVITED: Analytical Toolbox for Technology Enabling and Troubleshooting — Hugh Gotts, Air Liquide
2:40 PM: Comparison of HF and HCl cross-contamination between different ENTEGRIS FOUP platforms and Cu-coated wafers — Fernando Herran, CEA-LETI
3:00 PM: Effect of TMAH cleaning solution for removal of organic particle from Ru surface in EUV mask cleaning — Jin-Goo Park, Hanyang University
3:20 PM: Advanced Contamination Control using Novel Polyarylsulfone Membrane Technology — Patrick Connor, Pall
3:40 PM – 4:10 PM: BREAK Location: Monterey & Carmel rooms
Session 3: Advanced Etch Location: Saratoga Ballroom
Session Chairs: Rick Reidy, Yannick Le Tiec
4:10 PM: INVITED: Electron beam generated plasmas: Ultra cold sources for low damage, atomic layer processing — Scott Walton, Naval Research Lab
4:45 PM: Selectivity in Atomic Layer Etching Using Sequential, Self-Limiting Thermal Reactions — Steve George, Univ. of CO
5:15 PM: Environmental friendly Fluorine mixture cleaning process to replace C2F6, CF4 and NF3 as cleaning gas — Marcello Riva, Solvay
5:35 PM: Wrap Up/Additional Questions/Adjourn Organizers
5:40 PM: Day 1 End
6:00 PM - 8:00 PM Poster Session and Networking Reception
Location: Atrium
DAY 2 — Wednesday, April 20, 2016
7:30 AM – 9:00 AM Breakfast Location: Monterey & Carmel rooms
Session 4: ITRS/Surface Passivation Location: Saratoga Ballroom
Session Chairs: Joel Barnett, Jeff Butterbaugh
9:00 AM: Introductions, Day 2 Welcome
9:05 AM: KEYNOTE: ITRS 2.0 – Paolo Gargini, Stanford
9:50 AM: Effect of surface preparation of copper on self- assembly of fullerene molecules — Krishna Muralidharan, Univ. of AZ
10:10 AM: Novel Reactive Chemistry Sources for Surface Passivation of Future Generation Channel Materials — Dan Alvarez, Rasirc
10:30 AM - 11:00 AM BREAK Location: Monterey & Carmel rooms
11:00 AM: A Comparison of Sulfur-Based Chemistries to Passivate the (100) Surfaces of SiGe 25% and 75% — Zhonghao Zhang, Univ. of AZ
11:20 AM: Formation of Aqueous Ozonated Water Interfacial Layer (IL) and Functionalization using Trimethylaluminum (TMA) Dosing for Si1-xGex (100) Surfaces — Shariq Siddiqui, GLOBALFOUNDRIES
11:40 AM: High Temperature Water as a Clean and Etch of SiO2 Films — Rick Reidy, Univ. of N. Texas
12:00 PM – 1:30 PM LUNCH Location: Monterey & Carmel rooms
TECHNICAL COMMITTEE LUNCH Location: Tiburon Room
DAY 2 — Wednesday, April 20, 2016 cont’d
Session 5 Location: Saratoga Ballroom
Session Chairs: Mark Thirsk, Glenn Gale
1:30 PM: INVITED: The Impact of the Global Economy on the Semiconductor Outlook — Duncan Meldrum Ph.D., Hilltop Economics LLC
2:05 PM: Novel STI step height uniformity control by wet etch process in 4xnm cmos device — Wendy Ho, Powerchip
2:25 PM - 2:40 BREAK Location: Monterey & Carmel rooms
Session 6: Contamination Free Manufacturing Location: Saratoga Ballroom
Session Chairs: Glenn Gale, Allan Upham
2:40 PM: INVITED: Surface inspection and Metrology: Relevance, Challenges and Solutions — Jijen Vazhaeparambil, KLA-Tencor
3:15 PM: Improved cryogenic gas cleaning for nanoparticle removal — Chimaobi Mbanaso, TEL FSI
3:35 PM: Process Gas Ar Flow Usage Reduction in Ar Aerosol Cleaning — Asha Sharma, GLOBALFOUNDRIES
3:55 PM – 4:05 PM: BREAK Location: Monterey & Carmel rooms
Session 7: Panel Discussion Location: Saratoga Room
Moderator: Mike Corbett
4:05 PM: Panel Discussion (The Future of Formulated Chemistries)
4:55 PM: Wrap Up/Additional Questions/Adjourn Organizers
5:00 PM: Day 2 End
Posters
· Study of particle attachment on silicon wafers during rinsing — Takeo Fukui, Kurita
· Al Corrosion-free Photoresist Stripping and Etch Residue Removal Process with Diluted Halides Solutions at Room Temperature Condition — Steve Ryu, Avantor Materials
· Finite Element Analysis of CVD Stripping Kinetics for In Silico optimization of Semiconductor Manufacturing Parts for Sub-20 nm Technology Nodes — Ardy Sidhwa, Quantum Global Technologies
· Acoustic Characterization of a Photomask Cleaning System — Manish Keswani, Univ. of AZ
· Advanced Metrology for Post Etch Residue Removal —Eugene Shalyt,ECI Technology
· Rapid Cleaning Using Novel Processes with Coatings — John Moore, Daetec
· Surface Contamination Control through Final Surface Finish Processing for Semiconductor Equipment Parts for Sub-16nm Nodes — Ardy Sidhwa, Quantum Global Technologies
· Static control in Ultrapure DI water application —Eric Gou, SMIC
· Contamination Control of Manufacturing Practices Using Critical Wipers — Victor Chia, Air Liquid
· A Study of Removing Scan Damage on Advanced ArF PSM Mask by Dry Treatment before Cleaning —Eric Gou, SMIC
· Post Tungsten CMP Cleaner development for Organic and Particle Residue Improvement on Si3N4 Wafer Surface and Tungsten Compatibility — Ken Chao, Dupont
· SPM Strip of Metal-Oxide PR — Shan Hu, Tokyo Electron
· Effective Clean in 450mm Scrubber Tool for Throughput and Defect Removal Improvement —Chung Ju Yang,Global 450mm Consortium
· A Comparison of Sulfur-Based Chemistries to Passivate the (100) Surfaces of SiGe 25% and 75% — Zhonghao Zhang, Univ. of AZ